Product Information

ON5088,115

ON5088,115 electronic component of NXP

Datasheet
RFID Transponders 10V NPN 55GHz
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.2474
10 : USD 0.5878
100 : USD 0.296
500 : USD 0.2506
1000 : USD 0.2155
N/A

Obsolete

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RoHS - XON
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Additional Infomation About Product

ON5088 NPN wideband silicon germanium RF transistor Rev. 3 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high gain microwave transistor High maximum stable gain 27 dB at 1.8 GHz 110 GHz f silicon germanium technology T 1.3 Applications 2nd and 3rd LNA stage in DBS LNBs Satellite radio Low noise amplifiers for microwave communications systems WLAN and WiMAX applications Analog/digital cordless applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 10 V CB V collector-emitter voltage open base - - 3.0 V CE shorted base - - 10 V V emitter-base voltage open collector - - 1.0 V EB I collector current - 25 40 mA C 1 P total power dissipation T 90 C - - 136 mW tot sp h DC current gain I =10mA V =2V 160 280 400 FE C CE T =25 C j C collector-base V =2V f=1MHz - 70 - fF CBS CB capacitanceON5088 NXP Semiconductors NPN wideband silicon germanium RF transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit f transition frequency I =25mA V =2V -55 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =25mA V =2V -13 - dB p(max) C CE f = 12 GHz T =25 C amb NF noise figure I =5mA V =2V -1.1 - dB C CE f = 12 GHz = S opt T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version ON5088 - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads 4. Marking Table 4. Marking Type number Marking Description ON5088 *6N * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China ON5088 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 3 12 December 2012 2 of 9

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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