Product Information

BYV32E-200

BYV32E-200 electronic component of NXP

Datasheet
DIODE, ULTRAFAST, 2X10A
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.326 ea
Line Total: USD 1.33

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.326
10 : USD 1.0842
100 : USD 0.8346
500 : USD 0.7379
1000 : USD 0.5819
2000 : USD 0.5156

Read More Specifications

     
Manufacturer
Product Category
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current If Av
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No Of Pins
Packaging
Svhc
Current Ifsm
Diode Type
Forward Current If Max
Forward Voltage
Junction Temperature Tj Max
Reverse Recovery Time Trr Typ
Termination Type
LoadingGif

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Additional Infomation About Product

BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 27 February 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High reverse voltage surge capability Soft recovery characteristic minimizes power consuming oscillations High thermal cycling performance Very low on-state loss Low thermal resistance 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V repetitive peak - - 200 V RRM reverse voltage I average output square-wave pulse = 0.5 --20 A O(AV) current T 115 C both diodes mb conducting see Figure 1 see Figure 2 I repetitive peak t =2s =0.001 --0.2 A RRM p reverse current V electrostatic HBM C = 250 pF R = 1.5 --8 kV ESD discharge voltage k all pins Dynamic characteristics t reverse recovery I =1A V =30V - 2025ns rr F R time dI /dt = 100 A/s F T = 25 C ramp recovery j see Figure 5 I =1 A I =0.5 A - 1020ns R F T = 25 C step recovery j measured at reverse current = 0.25 A see Figure 6 Static characteristics V forward voltage I =8A T =150 C see - 0.72 0.85 V F F j Figure 4NXP Semiconductors BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb 2 K cathode A1 A2 3 A2 anode 2 K sym125 mb K mounting base cathode 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV32E-200 TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB BYV32E-200 4 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 27 February 2009 2 of 9

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