Product Information

BUK9615-100E

BUK9615-100E electronic component of NXP

Datasheet
MOSFET, N-CH, 100V, 66A, D2PAK

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.5721 ea
Line Total: USD 3.57

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 3.5721
10 : USD 1.5164
25 : USD 1.1312
100 : USD 0.9214
250 : USD 0.8111
500 : USD 0.7694

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rds On
Rds On Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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BUK9615-100E N-channel TrenchMOS logic level FET 13 February 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with Vgst(th) rating of greater than 0.5V at 175 C 3. Applications 12V, 24V and 48V Automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 66 A D GS mb P total power dissipation T = 25 C Fig. 3 - - 182 W tot mb Static characteristics R drain-source on-state V = 5 V I = 15 A T = 25 C Fig. 11 - 12.5 15 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 15 A V = 80 V - 23 - nC GD GS D DS Fig. 13 Fig. 14 Scan or click this QR code to view the latest information for this product D2PAKNXP Semiconductors BUK9615-100E N-channel TrenchMOS logic level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9615-100E D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK9615-100E BUK9615-100E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 - 66 A D mb GS T = 100 C V = 5 V Fig. 1 - 47 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 2 - 266 A DM mb p P total power dissipation T = 25 C Fig. 3 - 182 W tot mb T storage temperature -55 175 C stg BUK9615-100E All information provided in this document is subject to legal disclaimers. NXP N.V. 2014. All rights reserved Product data sheet 13 February 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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