Product Information

BTA216-600BT,127

BTA216-600BT,127 electronic component of NXP

Datasheet
Triacs 3 QUADRANT TRIAC

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8551 ea
Line Total: USD 1.86

4858 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4853 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.2995
10 : USD 1.0695
100 : USD 0.8521
500 : USD 0.7429
1000 : USD 0.6233
2000 : USD 0.5957
5000 : USD 0.5669
10000 : USD 0.5497
25000 : USD 0.5497

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Mounting Style
Packaging
Off State Leakage Current Vdrm Idrm
On State Voltage
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
On State Rms Current It Rms
Factory Pack Quantity :
Rohs Mouser
Off-State Leakage Current Vdrm Idrm
Cnhts
Hts Code
Product Type
Subcategory
Taric
LoadingGif

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BTA216-600BT Triacs high commutation Rev. 3 20 September 2018 Product data sheet 1. Product profile 1.1 General description Passivated high commutation triac in a plastic envelope. Featuring high maximum junction temperature and high commutation capability. Intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This device will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. 1.2 Features and benefits High maximum junction temperature High commutation capability 1.3 Quick reference data V 600 V I 16 A DRM T(RMS) I 50 mA I 140 A GT TSM T 150 C dI /dt=18A/ms j com 2. Pinning information Table 1: Pinning Pin Description Simplified outline Symbol 1 main terminal 1 (T1) mb T2 T1 2 main terminal 2 (T2) G 3 gate (G) sym051 1 mb mounting base 12 3 SOT78 (TO-220AB) 1 Connected to main terminal 2 (T2)BTA216-600BT WeEn Semiconductors Triacs high commutation 3. Ordering information Table 2: Ordering information Type number Package Name Description Version BTA216-600BT TO-220AB plastic single-ended package heatsink mounted 3 leads 1 mounting SOT78 hole 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 V repetitive peak off-state voltage - 600 V DRM I RMS on-state current full sine wave T 124 C -16 A T(RMS) mb see Figure 4 and 5 I non-repetitive peak on-state current full sine wave T = 25 C prior to surge TSM j see Figure 2 and 3 t = 20 ms - 140 A t = 16.7 ms - 150 A 2 2 2 ItI t for fusing t = 10 ms - 98 A s dI /dt rate of rise of on-state current I =20A I = 0.2 A dI /dt = 0.2 A/ s - 100 A/ s T TM G G I peak gate current -2 A GM V peak gate voltage -5 V GM P peak gate power -5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature 40 +150 C stg T junction temperature - 150 C j 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ s. BTA216-600BT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet Rev. 3 20 September 2018 2 of 11

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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