Product Information

BGS8L2X

BGS8L2X electronic component of NXP

Datasheet
RF Amplifier SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.6677 ea
Line Total: USD 3.34

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 5
Multiples : 1
5 : USD 0.6677
10 : USD 0.5283
100 : USD 0.4079
500 : USD 0.3456
1000 : USD 0.2752
5000 : USD 0.2221

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 5000
Multiples : 5000
5000 : USD 0.1622
10000 : USD 0.1598
25000 : USD 0.1552

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Additional Infomation About Product

BGS8L2 SiGe:C Low-noise amplifier MMIC with bypass switch for LTE Rev. 6 29 June 2018 Product data sheet 1 General description The BGS8L2, also known as the LTE3001L, is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8L2 requires one external matching inductor. The BGS8L2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8L2 can be switched off to operate in bypass mode at a 1 A current, to lower power consumption. The BGS8L2 can also be used in Digital TV receivers in the frequency range 460 MHz - 740 MHz. The BGS8L2 is optimized for 460 MHz to 960 MHz. 2 Features and benefits Operating frequency from 460 MHz to 960 MHz Noise figure = 0.85 dB Gain 13 dB High input 1 dB compression point of -1 dBm Bypass switch insertion loss of 1.9 dB IP3 of 1.5 dBm i Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 5.2 mA 2.8 V Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design Requires only one input matching inductor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in 6-pins leadless package 1.1 mm 0.7 mm 0.37 mm 0.4 mm pitch: SOT1232 180 GHz transit frequency - SiGe:C technology Moisture sensitivity level 1 XSON6NXP Semiconductors BGS8L2 SiGe:C Low-noise amplifier MMIC with bypass switch for LTE 3 Applications LNA for LTE reception in smart phones Feature phones Tablet PCs RF front-end modules Digital TV receivers BGS8L2 All information provided in this document is subject to legal disclaimers. NXP B.V. 2018. All rights reserved. Product data sheet Rev. 6 29 June 2018 2 / 18

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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