BAT754L,115

BAT754L Schottky barrier triple diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Three internal isolated planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in very small SOT363 Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Low forward voltage Low capacitance AEC-Q101 qualified 1.3 Applications Ultra high-speed switching Line termination Voltage clamping Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse voltage - - 30 V R Per diode V forward voltage I = 100 mA pulsed t 300 s - - 750 mV F F p 0.02 T = 25 C amb I reverse current V = 25 V pulsed t 300 s - - 2 A R R p 0.02 T = 25 C ambNexperia BAT754L Schottky barrier triple diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol K1 K2 K3 1 A1 anode (diode 1) 6 5 4 2 A2 anode (diode 2) 3 A3 anode (diode 3) A1 A2 A3 1 2 3 4 K3 cathode (diode 3) aaa-005704 TSSOP6 (SOT363) 5 K2 cathode (diode 2) 6 K1 cathode (diode 1) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAT754L TSSOP6 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code 1 BAT754L L1% 1 % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V reverse voltage - 30 V R I forward current - 200 mA F I repetitive peak forward current t < 1 s < 0.5 - 300 mA FRM p I non-repetitive peak forward t < 10 ms T = 25 C - 600 mA FSM p j(init) current T junction temperature - 125 C j T ambient temperature -55 125 C amb BAT754L All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2012. All rights reserved Product data sheet 22 November 2012 2 / 9