Product Information

BAP64-06W,115

BAP64-06W,115 electronic component of NXP

Datasheet
NXP Semiconductors PIN Diodes PIN 100V 100MA

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.1372
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Operating Frequency
Mounting Style
Package / Case
Packaging
Configuration
Frequency Range
Type
Brand
Carrier Life
Maximum Series Resistance Minimum If
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BAP64-06 Silicon PIN diode Rev. 5.0 22 March 2019 Product data sheet 1 Product profile 1.1 General description Two planar PIN diodes in common anode configuration in a SOT23 small SMD plastic package. 1.2 Features and benefits High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz AEC-Q101 qualified 1.3 Applications RF attenuators and switches 2 Pinning information Table 1.Discrete pinning Pin Description Simplified outline Symbol 1 cathode 1 3 3 2 cathode 2 1 2 3 common connection aaa-017781 1 2 top viewNXP Semiconductors BAP64-06 Silicon PIN diode 3 Ordering information Table 2.Ordering information Type number Package Name Description Version BAP64-06 - plastic surface-mounted package 3 leads SOT23 4 Marking Table 3.Marking Type number Marking Description BAP64-06 6K* * = t : made in Malaysia * = W : made in China 5 Limiting values Table 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Values are specified per diode. Symbol Parameter Conditions Min Max Unit V reverse voltage - 175 V R I forward current - 100 mA F P total power dissipation T = 90 C - 250 mW tot sp T storage temperature -65 +150 C stg T junction temperature -65 +150 C j 6 Thermal characteristics Table 5.Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to solder point 220 K/W th(j-sp) 7 Characteristics Table 6.Characteristics Values are specified per diode T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V forward voltage I = 50 mA - 0.95 1.1 V F F I reverse current V = 60 V - - 10 A R R V = 20 V - - 1 A R C diode capacitance see Figure 1 f = 1 MHz d V = 0 V - 0.52 - pF R BAP64-06 All information provided in this document is subject to legal disclaimers. NXP B.V. 2019. All rights reserved. Product data sheet Rev. 5.0 22 March 2019 2 / 9

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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