BAP51-02 General purpose PIN diode Rev. 03 2 January 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication General purpose PIN diode BAP51-02 FEATURES PINNING Low diode capacitance PIN DESCRIPTION Low diode forward resistance. 1 cathode 2 anode APPLICATIONS General RF applications. handbook, halfpage 12 DESCRIPTION Top view MAM405 General purpose PIN diode in a SOD523 ultra small SMD plastic package. Marking code: K1. Fig.1 Simplified outline (SOD523) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V continuous reverse voltage - 60 V R I continuous forward current - 50 mA F P total power dissipation T =90 C - 715 mW tot s T storage temperature - 65 +150 C stg T junction temperature - 65 +150 C j ELECTRICAL CHARACTERISTICS T = 25 C unless otherwise specied. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V forward voltage I =50mA - 0.95 1.1 V F F V reverse voltage I =10 A50 -- V R R I reverse current V =50V -- 100 nA R R C diode capacitance V = 0 f = 1 MHz - 0.4 - pF d R V = 1 V f = 1 MHz - 0.3 0.55 pF R V = 5 V f = 1 MHz - 0.2 0.35 pF R r diode forward resistance I = 0.5 mA f = 100 MHz note 1 - 5.5 9 D F I = 1 mA f = 100 MHz note 1 - 3.6 6.5 F I = 10 mA f = 100 MHz note 1 - 1.5 2.5 F Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R thermal resistance from junction to soldering point 85 K/W th j-s Rev. 03 - 2 January 2008 2 of 6