DocumentNumber:A2I25D025N FreescaleSemiconductor Rev. 0, 3/2015 TechnicalData RFLDMOSWidebandIntegrated A2I25D025NR1 PowerAmplifiers A2I25D025GNR1 The A2I25D025N wideband integrated circuit is designed with on--chip matching that makes it usablefrom 2100to 2900MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. 21002900MHz,3.2WAVG.,28V TypicalSingle--Carrier W--CDMA CharacterizationPerformance: AIRFASTRFLDMOSWIDEBAND V =28Vdc,I =56mA,I = 136mA, P = 3.2W Avg., DD DQ1(A+B) DQ2(A+B) out INTEGRATEDPOWERAMPLIFIERS (1) Input SignalPAR = 9.9dB 0.01%Probability onCCDF. G PAE ACPR ps Frequency (dB) (%) (dBc) 2300MHz 32.0 19.0 46.7 TO--270WB--17 2350MHz 31.8 19.0 47.1 PLASTIC 2400MHz 31.7 19.1 47.5 A2I25D025NR1 2496MHz 31.7 19.3 47.3 2600MHz 32.0 19.5 47.1 2690MHz 32.5 20.0 46.8 TO--270WBG--17 Features PLASTIC On--ChipMatching(50Ohm Input, DC Blocked) A2I25D025GNR1 IntegratedQuiescent Current TemperatureCompensationwith (2) Enable/DisableFunction Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications V DS1A V 1 17 VBW DS1A A V 2 GS2A RF inA RF /V out1 DS2A V 3 16 GS1A RF /V out1 DS2A RF 4 inA N.C. 5 GND 6 V GS1A QuiescentCurrent 15 GND GND 7 (2) V TemperatureCompensation GS2A N.C. 8 RF 9 14 inB V GS1B RF /V QuiescentCurrent out2 DS2B V 10 GS1B (2) V TemperatureCompensation V 11 GS2B GS2B V 12 13 VBW DS1B B (TopView) RF inB RF /V out2 DS2B Note: Exposed backside of the package is V DS1B thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. Alldatameasuredinfixturewithdevicesolderedtoheatsink. 2. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamily,andtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 0.5,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+225 C J InputPower P 20 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature74C,3.2W,2496MHz Stage1,28Vdc,I =56mA 6.3 DQ1(A+B) Stage2,28Vdc,I =136mA 1.8 DQ2(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) II Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) Stage1 -- OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =1.0Vdc,V =0Vdc) GS DS Stage1 -- OnCharacteristics (4) GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =2.5 Adc) DS D GateQuiescentVoltage V 2.0 Vdc GS(Q) (V =28Vdc,I =59mAdc) DS DQ1(A+B) Fixture Gate Quiescent Voltage V 4.6 5.3 6.1 Vdc GG(Q) (V =28Vdc,I =59mAdc,MeasuredinFunctionalTest) DD DQ1(A+B) 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat