Product Information

NTE56028

NTE56028 electronic component of NTE

Datasheet
Thyristor TRIAC 800V 350A 3-Pin(3+Tab) TO-220

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 13.965 ea
Line Total: USD 69.82

5 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
5 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 5
Multiples : 1
5 : USD 13.965
25 : USD 11.1038
50 : USD 10.9463
100 : USD 10.7756
250 : USD 9.8831
500 : USD 9.7388
1000 : USD 9.5944
2500 : USD 9.135

4 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 5
Multiples : 5
5 : USD 18.9239

     
Manufacturer
Product Category
Brand
Peak Repetitive Off-State Voltage Vdrm
On State Rms Current Itrms
Triac Case Style
Gate Trigger Current Max Qi Igt
Gate Trigger Voltage Max Vgt
Peak Gate Power
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NTE56028 TRIAC, 40 Amp Description: The NTE56028 is a 40 Amp TRIAC is a TO220 type package designed primarily for fullwave AC con- trol applications such as lighting systems, heater controls, motor controls, and power supplies. Features: Blocking Voltage of 800V All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability Gate Triggering Guaranteed in Four Modes Absolute Maximum Ratings: Peak Repetitive Off State Voltage, V DRM (T = 40 to +125C, 1/2 Sine Wave 50 to 60Hz, Gate Open, Note 1) . . . . . . . . . . . . . 800V J OnState RMS Current (T = +75C, Full Cycle Sine Wave 50 to60Hz, Note 2), I (RMS) . . . . 40A C T Peak NonRepetitive Surge Current (T = +125C, One Full Cycle, 60Hz), I . . . . . . . . . . . 350A J TSM 2 2 Circuit Fusing (t = 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A s Peak Gate Current (t 2s), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Voltage (t 2s), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V GM Peak Gate Power (t 2s), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GM Average Gate Power (T = +75C, t 8.3ms), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W C G(AV) Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 C/W thJA Mounting Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8in. lb. Note 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. Note 2. This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents.Electrical Characteristics: (T = +25C and either polarity of MT to MT voltage unless C 1 2 otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward Blocking Current I V = 800V, T = +25C 10 A DRM DRM J V = 800V, T = +125C 2 mA DRM J Peak Reverse Blocking Current I V = 800V, T = +25C 10 A RRM RRM J V = 800V, T = +125C 2 mA RRM J Peak OnState Voltage V I = 56A (Peak), Note 3 1.40 1.85 V TM TM Gate Trigger Current (Continuous DC) I GT MT (+), G (+) MT (), G () V = 12V, R = 100, 25 50 mA 2 2 D L MT (+), G () 2 MT (), G (+) 40 75 mA 2 Gate Trigger Voltage (Continuous DC) V GT MT (+), G (+) MT (), G () V = 800V, R = 100, 1.1 2.0 V 2 2 D L MT (+), G () 2 MT (), G (+) 1.3 2.5 V 2 Gate NonTrigger Voltage V GD MT (+), G (+) MT (), G () V = 800V, T = +125C, R = 10k, 0.2 V 2 2 D J L MT (+), G () 2 MT (), G (+) 0.2 V 2 Holding Current I V = 12V, Gate Open 30 75 mA H D Gate Controlled TurnOn Time t V = 800V, I = 56A (Peak), 1.5 s gt D TM I = 200mA GT Critical Rate of Rise of Off State dv/dt V = 800V, Exponential Waveform, 50 V/s D Voltage T = +125C C Critical Rate 0f Rise of Commutation dv/dt(c) V = 800V, I = 56A (Peak), 5 V/s D TM Voltage Commutating di/dt = 13.4A/ms, Gate Unenergized, T = +75C C Note 3. Pulse Width 2ms, Duty Cycle 2%. .420 (10.67) Max .110 (2.79) .500 .147 (3.75) (12.7) Dia Max Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT Gate 1 .100 (2.54) MT /Tab* 2 * NOTE: Tab may be isolated.

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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