Product Information

NTE56014

NTE56014 electronic component of NTE

Datasheet
Triac; 400V; 25A; 100/150mA; THT; bulk; TO3

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 19.2098 ea
Line Total: USD 76.84

0 - Global Stock
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 4
Multiples : 1
4 : USD 19.2098
50 : USD 12.3686
100 : USD 11.4214
200 : USD 10.5969
500 : USD 9.8949

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 19.88
2 : USD 14.448
3 : USD 14.434
4 : USD 13.65

     
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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NTE56014 TRIAC, 25 Amp TO3 Isolated Flange Absolute Maximum Ratings and Electrical Characteristics: Peak Repetitive Off State Voltage, (Gate Open, T = +110 C, Note 1), V 400V J DRM RMS OnState Current (T = +80C, Conduction Angle of 360 ), I (rms) . 25A C T Peak Surge (NonRepetitive) On State Current (One Cycle, 50Hz or 60Hz), I 250A TSM Peak Gate Trigger Current (3 s Max), I 4A GTM Peak Gate Power Dissipation (I I ), P 40W GT GTM GM Average Gate Power Dissipation, P 0.8W G(AV) Operating Junction Temperature Range, T . 40 to +110 C J Storage Temperature Range, T . 40 to +150C stg Typical Thermal Resistance, Junction toCase, R . 1.3 C/W thJC Note 1. All values apply in either direction. Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Peak OffState Current I V = 400V, T = +110C, 1 mA DRM DRM C Gate Open, Note 1 Maximum OnState Voltage V I = 25A, T = +25C, Note 1 1.8 V TM T C DC Holding Current I T = +25C, Gate Open, Note 1 80 mA HO C Critical RateofRise of Critical V = 400V, T = +110C, Gate Open, 200 V/s D C dv/dt Note 1 OffState Voltage Critical RateofRise of Commutating V = 400V, I = 25A, T = +80C, 5 V/s D T C dv/dt Gate Unenergized, Note 1 Commutating Voltage DC Gate Trigger Current I V = 12V, R = 60, T = +25C 100 mA MT2 (+) G (+), MT2 () G () GT D L C MT2 (+) G (), MT2 () G (+) 150 mA DC Gate Trigger Voltage V V = 12V, R = 30, T = +25C 2.5 V GT D L C Gate Controlled TurnOn Time t V = 400V, I = 200mA, t = 0.1s, 3 s gt D GT r I = 10A Peak, T = +25C T C Note 1. All values apply in either direction.1.197 (30.4) Max .255 .161 (4.08) Max (6.48) .500 Max (12.7) Max MT2 1.050 (26.67) 40 Max 35 Max MT1 Gate .880 (22.35) Max 1.460 (37.08) 1.075 Max (27.3) Max .131 (3.32) Max 1.550 (39.37) Max

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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