Product Information

NTE5568

NTE5568 electronic component of NTE

Datasheet
Stud thyristor; 600V; 80A; 100mA; TO65

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 49.017 ea
Line Total: USD 98.03

0 - Global Stock
MOQ: 2  Multiples: 1
Pack Size: 1
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Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2
Multiples : 1
2 : USD 49.017
10 : USD 29.3726
25 : USD 27.4114
50 : USD 26.6983
100 : USD 25.6954

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 44.2487
10 : USD 41.2464
50 : USD 39.6708

0 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 40.25
2 : USD 38.066
3 : USD 38.052

     
Manufacturer
Product Category
Brand
Scr Module Type
Peak Repetitive Off-State Voltage Vdrm
Gate Trigger Current Max Igt
Current It Av
On State Rms Current Itrms
Holding Current Max Ih
LoadingGif

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NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier (SCR) 80 Amp (I ), TO65 (TO208AC) T(RMS) Features: High Current Rating Excellent Dynamic Characteristics Superior Surge Capabilities Standard Package Voltage Ratings and Electrical Characteristics: (T = +125C unless otherwise specified) J Maximum Repetitive Peak Forward and Reverse Voltage (Note 1), V , V DRM RRM NTE5567 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5568 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Maximum Non Repetitive Peak Voltage (Note 2), V RSM NTE5567 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V NTE5568 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Maximum Peak Reverse and Off State Current, I , I . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA DRM RRM Maximum Average On State Current (180 Sinusoidal Conduction), I T(AV) NTE5567, NTE5568, NTE5569 (T = +94C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A C NTE5571 (T = +90C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A C Maximum RMS On State Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A T(RMS) Maximum Peak OneCycle Non Repetitive Surge Current (t = 10ms, Sinusoidal Half Wave), I TSM (No Voltage Reapplied) NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1430A NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200A 2 2 Maximum I t for Fusing (t = 10ms, Sinusoidal Half Wave), I t (No Voltage Reapplied) 2 NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.18KA s 2 NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.21KA s (100% V Reapplied) RRM 2 NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.20KA s 2 NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.10KA s 2 2 Maximum I t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I t 2 NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101.8KA s 2 NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.1KA s Rev. 610Voltage Ratings and Electrical Characteristics (Contd): (T = +125C unless otherwise specified) J Low Level Value of Threshold Voltage (16.7% x x I < I < x I ), V T(AV) T(AV) T(TO)1 NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.94V NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.02V High Level Value of Threshold Voltage ( x I < I < 20 x x I ), V T(AV) T(AV) T(TO)2 NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.08V NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17V Low Level Value of On State Slope Resistance (16.7% x x I < I < x I ), r T(AV) T(AV) t1 NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.08m NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.78m High Level Value of OnState Slope Resistance ( x I < I < 20 x x I ), V T(AV) T(AV) T(TO)2 NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.34m NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.97m Maximum On State Voltage (I = 157A, T = +25C), V pk J TM NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.60V NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78V Maximum Holding Current (T = +25C, Anode Supply 22V, Resistive Load, Initial I = 2A), I . 200mA J T H Latching Current (Anode Supply 6V, Resistive Load), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA L Maximum Rate of Rise of TurnedOn Current, di/dt (V = Rated V , Gate Pulse = 20V, 15, t = 6s, t = 0.1s ax., I = (2x Rated di/dt) A) DM DRM p r TM NTE5567, NTE5568 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/s NTE5569, NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/s Typical Delay Time, t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9s d (T = +25C, V = Rated V , DC Resistive Circuit, Gate Pulse = 10V, 15 Source, t = 20s) C DM DRM p Typical Turn Off Time, t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110s q (T = +125C, I = 50A, Reapplied dv/dt = 20Vs, dir/dt = 10A/s, V = 50V) C TM R Maximum Critical Rate of Rise of OffState Voltage, dv/dt (Linear to 100% rated V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V/s DRM (Linear to 67% rated V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/s DRM Maximum Peak Gate Power (t 5ms), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W p G(AV) Maximum Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W GM Maximum Peak Positive Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A GM Maximum Peak Positive Gate Voltage, +V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V GM Maximum Peak Negative Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V GM DC Gate Current Required to Trigger (6V Anode toCathode Applied), I . . . . . . . . . . . . . . 50mA GT DC Gate Voltage Required to Trigger (6V AnodetoCathode Applied, T = +25C), V . . . 2.5V J GT DC Gate Current Not to Trigger (Rated V AnodetoCathode Applied), I . . . . . . . . . . 5.0mA DRM GD DC Gate Voltage Not to Trigger (Rated V AnodetoCathode Applied), V . . . . . . . . . . . 0.2V DRM GD Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance Junction toCase (DC Operation), R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.35K/W thJC Case toHeatsink (Mounting Surface Smooth, Flat, and Greased), R . . . . . . . 0.25K/W thCS Mounting Torque (NonLubricated Threads), T . . . . . . . . . . . . . . . . . . 25 30 (2.8 3.4) lbfin (Nm) Note 1. Units may be broken over nonrepetitively in the offstate direction without damage, if di/dt does not exceed 20A/s. Note 2. For voltage pulses with t 5ms. p

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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