Product Information

NTE5427

NTE5427 electronic component of NTE

Datasheet
Thyristor; 200V; 7A; 25mA; THT; TO39

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 12.9528 ea
Line Total: USD 38.86

11 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
11 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 1
5 : USD 15.5
25 : USD 12.8625
50 : USD 12.6625
100 : USD 12.1125
250 : USD 11.4625
500 : USD 11.15
1000 : USD 10.8625

     
Manufacturer
Product Category
Case
Mounting
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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Image Description
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Image Description
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NTE5427 thru NTE5429 Silicon Controlled Rectifier (SCR) 7 Amp, TO39 Type Package Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (T = +110 C), V C RRM NTE5427 ................................................................... 200V NTE5428 ................................................................... 400V NTE5429 ................................................................... 600V Repetitive Peak OffState Voltage (T = +110 C), V C DRM NTE5427 ................................................................... 200V NTE5428 ................................................................... 400V NTE5429 ................................................................... 600V RMS OnState Current (T = +80C, Conduction Angle of 180 ), I ................... 7A C T(RMS) Peak Surge (Non Repetitive) On State Current (One Cycle at 50 or 60Hz), I ........... 80A TSM Peak GateTrigger Current (3 s Max), I ............................................ 1A GTM Peak Gate Power Dissipation (I I ), P ...................................... 20W GT GTM GM Average Gate Power Dissipation, P .......................................... 500mW G(AV) Operating Temperature Range, T ......................................... 40 to +110 C opr Storage Temperature Range, T .......................................... 40 to +150C stg Typical Thermal Resistance, Junction toCase, R .............................. 2.5 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit I 1 mA Peak OffState Current V = Max, V = Max, RRM RRM DRM T = +110 C, R = 1k C GK I 1 mA DRM Maximum OnState Voltage V I = 7A 2 V TM T DC Holding Current I 50 mA HOLD DC GateTrigger Current I V = 6VDC, R = 100 25 mA GT D L DC GateTrigger Voltage V V = 6VDC, R = 100 1.5 V GT D L Gate Controlled TurnOn Time t I x 3 2 s gt G GT 2 2 2 I t for Fusing Reference I t For SCR Protection 2.6 A sec Critical Rate of OffState Voltage dv/dt Gate Open, T = +100C 100 V/ s C (critical) Rev. 1117.370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.06) Max .500 (12.7) Min .019 (0.5) Gate Cathode Anode 45 .031 (.793)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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