NTE3091 Optocoupler Photo SCR Output Description: The NTE3091 is an optically coupled SCR with a gallium arsenide infrared emitter and a silicon photo SCR sensor in a 6 Lead DIP type package. Switching can be achieved while maintaining a high degree of isolation between triggering and load circuits. This device can be used in SCR TRIAC and solid state relay applications where high blocking voltages and low input current sensitivity is required. Features: Turn On Current (I ), 5mA Typical FT Gate Trigger Current (I ), 20mA Typical GT Surge Anode Current, 5A Blocking Voltage, 400V Gate Trigger Voltage (V ), 0.6V Typical GT Isolation est Voltage 5300V RMS Solid State Reliability Absolute Maximum Rating: (T = +25 C, Note 1, unless otherwise specified) A Input Peak Reverse Voltage, V .......................................................... 6V RM Forward Current, I F Continuous ................................................................ 60mA Peak (1.0ms, 1% Duty Cycle) ................................................... 3A Power Dissipation .............................................................. 100mW Derate Above 25 C .................................................... 1.33mW/ C Output Reverse Gate Voltage, V ........................................................... 6V RG Anode Voltage (DC or AC Peak), V ................................................. 400V A RMS Forward Current, I ..................................................... 300mA FRMS Surge Anode Current (10ms Duration), I ............................................. 5A AS Peak Forward Current (Pulse Width = 100 s, Duty Cycle = 1%), I ...................... 10A FM Surge Gate Current (5ms Duration), I ............................................ 200mA GS Power Dissipation (T = +25 C) ................................................. 1000mW C Derate Linearly From 25 C ............................................. 13.3mW/ C Note 1. Stresses in excess of the Absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to Absolute Maximum Ratings for extended periods of time can adversely affect reliability. Rev. 514Absolute Maximum Rating (Contd): (T = +25 C, Note 1, unless otherwise specified) A Coupler Isolation Test Voltage, V ISO (Between Emitter and Detector Referred to Standard Climate 23 C/50% RH, DIN 50014) .................................. 5300V Creepage ..................................................................... 7.0mm Clearance ..................................................................... 7.0mm Comparative Tracking Index (Per DIN IEC 112/VDE 0303, Part 1) ........................ 175 Isolation Resistance (V = 500V), R IO IO 12 T = +25 C ............................................................... 10 A 11 T = +100 C .............................................................. 10 A Total Package Dissipation, P ................................................... 400mW tot Derate Linearly From 25 C .............................................. 5.5mW/ C Operating Temperature Range, T ......................................... 55 to +100 C opr Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 10sec), T .................................... +260 C L Note 1. Stresses in excess of the Absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to Absolute Maximum Ratings for extended periods of time can adversely affect reliability. Electrical Characteristics: (T = +25 C, Note 2 unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input Forward Voltage V I = 10mA 1.2 1.5 V F F Reverse Leakage Current I V = 3V 10 A R R Capacitance C V = 0, f = 1MHz 50 pF J Output Forward Blocking Voltage V I = 150 A, R = 10k , T = +100 C 400 V DM D GK A Reverse Blocking Voltage V 400 V RM OnState Voltage V I = 300mA 1.1 1.3 V T T Holding Current I R = 27k , V = 50V 500 A H GK FX Gate Trigger Voltage V V = 100V, R = 27k , R = 10k 0.6 1.0 V GT FX GK L Forward Leakage Current I 150 A V = 400V, R = 10k , I = 0, R RX GK F T = +100 C A Reverse Leakage Current 150 A Capacitance (AnodeGate) V = 0, f = 1MHz 20 pF Capacitance (GateCathode) V = 0, f = 1MHz 350 pF Coupled TurnOn Current I V = 50V, R = 10k 20 mA FT DM GK V = 100V, R = 27k 5 11 mA DM GK Note 2. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.