Product Information

NTE3046

NTE3046 electronic component of NTE

Datasheet
Optocoupler SCR AC-OUT 1-CH 6-Pin PDIP

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.0559 ea
Line Total: USD 6.06

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 2
Multiples : 1
2 : USD 19.5
25 : USD 7.3125
50 : USD 4.875
100 : USD 4.3604
250 : USD 4.0625
500 : USD 3.8052
1000 : USD 3.6969

0 - WHS 2


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 6.0559
4 : USD 4.7461
11 : USD 4.4926

     
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NTE3046 Optoisolator SCR Photothyristor Output Description: The NTE3046 consists of a photo SCR coupled to a gallium arsenide infrared diode in a 6Lead DIP type plastic package. Features: BuiltIn Memory AC Switch (SPST) High Current Carrying Capability Absolute Maximum Ratings: LED (GaAs Diode) Reverse Voltage 3V Forward Current Continuous 60mA Peak (50 s pulse, 120 pps) . 500mA Power Dissipation (T = +25C) 90mW A Derate Linearly Above 25C . 1.2mW/C Detector (Photo SCR) DC Anode Current . 100mA Peak Pulse Current (100 s pulse, 120 pps) . 1.0A Average Gate Current 25mA Reverse Gate Current 1.0mA Anode Voltage (DC or Peak AC) 400V Power Dissipation (T = +25C) . 200mW A Derate Linearly Above 25C 2.67mW/C Total Device Isolation Surge Voltage . 3550V Power Dissipation (T = +25C) . 250mW A Derate Linearly Above 25C . 3.3mW/C Operating Temperature Range . 30 to +100C Storage Temperature Range . 55 to +150C Lead Temperature (During Soldering for 7sec) +260CElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input Diode Forward Voltage V I = 20mA 1.25 1.5 V F F Reverse Voltage V I = 10 A 3.0 V R R Junction Capacitance C V = 0 50 pF J R Detector Forward Leakage Current I V = Rated V , R = 27k 0.02 2.0 A FX FX FX GK Reverse Leakage Current I V = Rated V , R = 27k 0.02 2.0 A RX RX RX GK Forward Blocking Voltage V , V R = 10k , T = +100C 400 V FSM DM GK A Reverse Blocking Voltage V 400 V ROM ON Voltage V I = 100mA 0.98 1.3 V TM T Holding Current I R = 27k 0.01 0.16 0.50 mA HX GK Gate Trigger Voltage V V = 100V 0.6 1.0 V GT FX Gate Trigger Current I V = 100V, R = 10k , R = 27k 23 100 A GT FX L GK Coupled TurnOn Current (Threshold) I V = 100V, R = 27k 0.5 5.0 14.0 mA FT FX GK Switching t + t V = 20V, I = 30mA, R = 27k 7 s r d CC F GK Steady State Voltage t = 1min 3500 V t = 1min 2500 V rms Surge Isolation Rating V t = 1sec 4000 V ISO t = 1sec 3000 V rms 11 12 Isolation Resistance R V = 500V 10 10 ISO Isolation Capacitance C f = 1MHz 1 2 pF ISO 6 54 .260 (6.6) Max 12 3 Pin Connection Diagram Anode 1 6 Gate .070 (1.78) Max .350 (8.89) .300 (7.62) 2 5 Cathode Anode Max N.C. 3 4 Cathode .200 (5.08) Max .350 (8.89) Max .085 (2.16) Max .100 (2.54)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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