NTE2320

NTE2320 Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair) Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Total Device Dissipation (T = +25C, Each Die, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.18mW/C Total Device Dissipation (T = +25C, Four Die Equal Power, Note 1), P . . . . . . . . . . . . . . . . 1.25W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/C Total Device Dissipation (T = +25C, Each Die, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Total Device Dissipation (T = +25C, Four Die Equal Power, Note 1), P . . . . . . . . . . . . . . . . 3.0W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Reistance, JunctiontoAmbient, R thJA Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W Thermal Reistance, JunctiontoCase, R thJC Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41.6C/W Coupling Factors, JunctiontoAmbient Q1Q4 or Q2Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60% Q1Q2 or Q3Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24% Coupling Factors, JunctiontoCase Q1Q4 or Q2Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30% Q1Q2 or Q3Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20% Note 1. Voltage and current are negative for PNP transistors.Electrical Characteristics: (T = +25C, Note 1 unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 10mA, I = 0, Note 2 30 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 60 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 50V, I = 0 30 nA CBO CB E Emitter Cutoff Current IE V = 3V, I = 0 30 nA BO EB C ON Characteristics (Note 3) DC Current Gain h V = 10V, I = 1mA 50 FE CE C V = 10V, I = 10mA 75 CE C V = 10V, I = 150mA 100 CE C V = 10V, I = 300mA 20 CE C CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA 0.4 V CE(sat) C B I = 300mA, I = 30mA 01.4 V C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA 1.3 V BE(sat) C B I = 300mA, I = 30mA 2.0 V C B SmallSignal Characteristics Current GainBandwidth Product f V = 20V, I = 50mA, f = 100MHz, 200 350 MHz T CE C Note 3 Output Capacitance C obo NPN V = 10V, I = 0, f = 1MHz 6.0 8.0 pF CB E PNP 4.5 8.0 pF Input Capacitance C ibo NPN V = 2V, I = 0, f = 1MHz 20 30 pF EB C PNP 17 30 pF Switching Characteristics TurnOn Time t V = 30V, V = 0.5V, I = 150mA, 30 ns on CC EB C I = 15mA B1 TurnOff Time t V = 30V, I = 150mA, 225 ns off CC C I = I = 15mA B1 B2 Note 1. Voltage and current are negative for PNP transistors. Note 2. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. Note 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.