Product Information

PUMX1

PUMX1 electronic component of Nexperia

Datasheet
TRANSISTOR, NPN, NPN, 40V, 0.1A, SOT363
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 0.0723 ea
Line Total: USD 36.15

0 - Global Stock
MOQ: 500  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 500
Multiples : 1

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PUMX1
Nexperia

500 : USD 0.0723
1500 : USD 0.0688

Read More Specifications

     
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Module Configuration
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PUMX1 40 V, 100 mA NPN/NPN general-purpose transistor Rev. 04 20 January 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor with two independently operating transistors in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP complement complement NXP JEITA PUMX1 SOT363 SC-88 PUMT1 PUMZ1 1.2 Features Double general-purpose transistor Board-space reduction Very small SMD plastic package 1.3 Applications General-purpose switching and amplification 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1emitterTR1 6 5 4 6 5 4 2baseTR1 3 collector TR2 TR2 TR1 4emitterTR2 132 5baseTR2 1 2 3 6 collector TR1 sym020PUMX1 NXP Semiconductors 40 V, 100 mA NPN general-purpose double transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PUMX1 SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code PUMX1 Z*Z 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 100 mA C I peak collector current - 200 mA CM I peak base current - 200 mA BM P total power dissipation T 25 C- 200 mW tot amb Per device 1 P total power dissipation T 25 C -300 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PUMX1 4 NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 20 January 2010 2 of 8

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