Product Information

PSMN1R2-25YLC

PSMN1R2-25YLC electronic component of Nexperia

Datasheet
MOSFET, N CH, 25V, 100A, LFPAK
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.0958 ea
Line Total: USD 3.1

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 100
Multiples : 1

Stock Image

PSMN1R2-25YLC
Nexperia

100 : USD 1.0504
500 : USD 0.8731
1000 : USD 0.6339
5000 : USD 0.6159

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
LoadingGif

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Additional Infomation About Product

PSMN1R2-25YLC N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Ultra low QG, QGD and QOSS for high qualified to 175C system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j 1 I drain current T =25 C V =10V --100A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --179W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =25A -1.351.7 m DSon GS D resistance T =25C j see Figure 12 V =10V I =25A -1.051.3 m GS D T =25C j see Figure 12 LFPAKPSMN1R2-25YLC NXP Semiconductors N-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =25A -8.3 -nC GD GS D V =12 V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =25A -31 - nC G(tot) GS D V =12 V see Figure 15 DS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D mb 2S source 3S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R2-25YLC LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN1R2-25YLC 1C225L 1 % = placeholder for manufacturing site code. PSMN1R2-25YLC All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 2 May 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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