Product Information

PQMD12Z

PQMD12Z electronic component of Nexperia

Datasheet
Bipolar Transistors - BJT NPN/PNP resistor equipped transistors
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5438 ea
Line Total: USD 0.54

5105 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3104 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

PQMD12Z
Nexperia

1 : USD 0.3795
10 : USD 0.2817
100 : USD 0.1598
1000 : USD 0.0874
5000 : USD 0.0701
10000 : USD 0.0552
25000 : USD 0.0517
50000 : USD 0.0449

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

PQMD12 NPN/PNP resistor-equipped transistors R1 = 47 k, R2 = 47 k 8 July 2015 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Low package height of 0.37 mm Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter open base - - 50 V CEO voltage I output current - - 100 mA O Per transistor for the PNP transistor with negative polarity R1 resistance 1 T = 25 C 33 47 61 k amb R2/R1 resistance ratio 0.8 1 1.2 Nexperia PQMD12 NPN/PNP resistor-equipped transistors R1 = 47 k, R2 = 47 k 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol O1 I2 GND2 1 GND1 GND (emitter) TR1 1 6 7 2 I1 input ( base) TR1 R1 R2 3 O2 output (collector) TR2 2 5 TR2 4 GND2 GND (emitter) TR2 TR1 8 3 4 R2 R1 5 I2 input ( base) TR2 6 O1 output (collector) TR1 Transparent top view GND1 I1 O2 7 O1 output (collector) TR1 DFN1010B-6 (SOT1216) aaa-007379 8 O2 output (collector) TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PQMD12 DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PQMD12 11 00 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PQMD12 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 8 July 2015 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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