Product Information

PMPB95ENEAX

PMPB95ENEAX electronic component of Nexperia

Datasheet
MOSFET 80V single N-channel Trench MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5418 ea
Line Total: USD 0.54

2073 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4643 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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PMPB95ENEAX
Nexperia

1 : USD 0.4278
10 : USD 0.3669
100 : USD 0.2576
500 : USD 0.207
1000 : USD 0.1737
3000 : USD 0.1495
9000 : USD 0.1472
24000 : USD 0.1449
45000 : USD 0.1426

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PMPB95ENEA 80 V, single N-channel Trench MOSFET 17 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 80 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - - 4.1 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 2.8 A T = 25 C - 80 105 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMPB95ENEA 80 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 3 G gate G 3 4 8 4 S source Transparent top view 5 D drain DFN2020MD-6 (SOT1220) S 6 D drain 017aaa255 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB95ENEA DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMPB95ENEA 2A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 80 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - 4.1 A D GS amb V = 10 V T = 25 C 1 - 2.8 A GS amb V = 10 V T = 100 C 1 - 1.8 A GS amb I peak drain current T = 25 C single pulse t 10 s - 11.2 A DM amb p PMPB95ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 17 December 2013 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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