Product Information

PMBT5550,235

PMBT5550,235 electronic component of Nexperia

Datasheet
Bipolar Transistors - BJT TRANS SW TAPE-11
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4884 ea
Line Total: USD 0.49

24346 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
23387 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMBT5550,235
Nexperia

1 : USD 0.3208
10 : USD 0.2185
100 : USD 0.0897
1000 : USD 0.0541
2500 : USD 0.0506
10000 : USD 0.0311
20000 : USD 0.0311
50000 : USD 0.0299
100000 : USD 0.0287

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PMBT5550 NPN high-voltage transistor 31 August 2020 Product data sheet 1. General description NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low current (max. 300 mA) High voltage (max. 140 V) AEC-Q101 qualified 3. Applications General purpose 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 140 V CEO voltage I collector current - - 300 mA C 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 B base C 2 E emitter B 3 C collector E 1 2 sym123 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT5550 SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm bodyNexperia PMBT5550 NPN high-voltage transistor 7. Marking Table 4. Marking codes Type number Marking code 1 PMBT5550 %1F 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 160 V CBO V collector-emitter voltage open base - 140 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 300 mA C I peak collector current single pulse t 1 ms - 600 mA CM p I peak base current - 100 mA BM P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air 1 - - 500 K/W th(j-a) junction to ambient 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMBT5550 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 31 August 2020 2 / 8

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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