Product Information

PMBF170.215

PMBF170.215 electronic component of Nexperia

Datasheet
MOSFET N Trench 60V 300mA 2V @ 1mA 5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.1008 ea
Line Total: USD 1.01

0 - Global Stock
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 10
Multiples : 10

Stock Image

PMBF170.215
Nexperia

10 : USD 0.1041
50 : USD 0.0709
250 : USD 0.0622
280 : USD 0.0535
760 : USD 0.0506

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
Category
Brand Category
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PMBF170.215 is a P-channel Enhancement MOSFET produced by Nexperia. The device features a maximum drain source voltage of -170V, a maximum current rating of -236A, and a maximum power dissipation of -802W. This MOSFET is designed for power switching applications, such as DC-DC converters, power management and motor control. It is a through-hole device, with a zero gate-source voltage design for improved breakdown and EMI performance. This product is also AEC-Q101 qualified for automotive applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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