Product Information

PESD3V6Z1BCSFYL

PESD3V6Z1BCSFYL electronic component of Nexperia

Datasheet
ESD Suppressors / TVS Diodes PESD3V6Z1BCSF/SOD962/SOD962

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4211 ea
Line Total: USD 0.42

5312 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11201 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5076
10 : USD 0.3453
25 : USD 0.3414
50 : USD 0.3375
100 : USD 0.2025
250 : USD 0.15
500 : USD 0.1271
1000 : USD 0.0819
3000 : USD 0.0751
6000 : USD 0.0674

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Factory Pack Quantity :
Subcategory
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PESD3V6Z1BCSF Extremely low capacitance bidirectional ESD protection diode 2 March 2021 Product data sheet 1. General description Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family . The device is housed in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits Bidirectional ESD protection of one line Extremely low diode capacitance C = 0.45 pF d Extremely low clamping to protect sensitive I/Os Extremely low-inductance protection path to ground ESD protection up to 30 kV according to IEC 61000-4-2 Surge robustness I = 15 A according to IEC 61000-4-5 PPM Ultra small SMD package 3. Applications Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit C diode capacitance f = 1 MHz V = 0 V T = 25 C - 0.45 0.6 pF d R amb V reverse standoff - - 3.6 V RWM voltageNexperia PESD3V6Z1BCSF Extremely low capacitance bidirectional ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode (diode 1) K1 K2 1 2 2 K2 cathode (diode 2) sym045 Transparent top view DSN0603-2 (SOD962-2) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V6Z1BCSF DSN0603-2 silicon, leadless ultra small package 2 terminals 0.4 mm pitch SOD962-2 0.6 mm x 0.3 mm x 0.3 mm body 7. Marking Table 4. Marking codes Type number Marking code C4 PESD3V6Z1BCSF 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse standoff voltage - 3.6 V RWM I rated peak pulse current t = 8/20 s 1 2 - 15 A PPM p T ambient temperature -40 125 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge IEC 61000-4-2 contact discharge 3 -30 30 kV ESD voltage IEC 61000-4-2 air discharge 3 -30 30 kV 1 Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5. 2 In positive and negative direction. 3 Device stressed with ten non-repetitive ESD pulses. PESD3V6Z1BCSF All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 2 March 2021 2 / 16

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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