Product Information

PESD36VS2UT

PESD36VS2UT electronic component of Nexperia

Datasheet
DIODE, DUAL ESD TVS, UNI, 36V, SOT23
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.1953 ea
Line Total: USD 19.53

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 100
Multiples : 1

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PESD36VS2UT
Nexperia

100 : USD 0.1861
500 : USD 0.142
1000 : USD 0.1047
5000 : USD 0.0964

Read More Specifications

     
Manufacturer
Product Category
Packaging
Operating Voltage
Power Dissipation Pd
Clamping Voltage Vc Max
Diode Case Style
No Of Pins
Svhc
Breakdown Voltage Max
Msl
Peak Pulse Current Ippm
Reverse Stand-Off Voltage Vrwm
Tvs Polarity
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Additional Infomation About Product

PESD36VS2UT Low capacitance unidirectional double ESD protection diode Rev. 01 16 July 2009 Product data sheet 1. Product prole 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 1.2 Features n Unidirectional ESD protection of n ESD protection up to 30 kV two lines n Low diode capacitance: C =17pF n IEC 61000-4-2 level 4 (ESD) d n Max. peak pulse power: P = 160 W n IEC 61000-4-5 (surge) I = 2.5 A PP PP n Low clamping voltage: V =55V n AEC-Q101 qualied CL n Ultra low leakage current: I 1 A RM 1.3 Applications n Computers and peripherals n Portable electronics n Audio and video equipment n Communication systems n Cellular handsets and accessories n 10/100 Mbit/s Ethernet n Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specied. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage - - 36 V RWM C diode capacitance f = 1 MHz V=0V - 1735pF d RPESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 cathode (diode 1) 3 3 2 cathode (diode 2) 3 common anode 12 12 006aaa154 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD36VS2UT - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PESD36VS2UT LF* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode 1 2 P peak pulse power t = 8/20 s - 160 W PP p 1 2 I peak pulse current t = 8/20 s - 2.5 A PP p Per device T junction temperature - 150 C j T ambient temperature - 55 +150 C amb T storage temperature - 65 +150 C stg 1 Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. 2 Measured from pin 1 or 2 to pin 3. PESD36VS2UT 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 16 July 2009 2 of 12

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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