Product Information

NX7002BKSX

NX7002BKSX electronic component of Nexperia

Datasheet
MOSFET 60V, Dual N-channel Trench MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3599 ea
Line Total: USD 0.36

7423 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1687 - Warehouse 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 5
Multiples : 5

Stock Image

NX7002BKSX
Nexperia

5 : USD 0.1274
50 : USD 0.1037
150 : USD 0.0918
500 : USD 0.0829
3000 : USD 0.0757
6000 : USD 0.0722

7423 - Warehouse 2


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

NX7002BKSX
Nexperia

1 : USD 0.3599
10 : USD 0.2438
100 : USD 0.1
1000 : USD 0.0701
3000 : USD 0.0552
9000 : USD 0.0379
24000 : USD 0.0368
99000 : USD 0.0368

2647 - Warehouse 3


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 5
Multiples : 1

Stock Image

NX7002BKSX
Nexperia

5 : USD 0.1846
25 : USD 0.0845
100 : USD 0.0754
246 : USD 0.0663
675 : USD 0.0624

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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NX7002BKS 60 V, dual N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C - - 330 mA D GS sp V = 10 V T = 25 C 1 - - 240 mA GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 200 mA T = 25 C - 2.2 2.8 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 1 cm .Nexperia NX7002BKS 60 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D1 D2 1 S1 source TR1 2 G1 gate TR1 G1 3 D2 drain TR2 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX7002BKS TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 NX7002BKS LT% 1 % = placeholder for manufacturing site code NX7002BKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 May 2015 2 / 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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