Product Information

BST52.115

BST52.115 electronic component of Nexperia

Datasheet
Transistor: NPN; bipolar; Darlington; 80V; 1A; 1.3W; SOT89
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.5166 ea
Line Total: USD 1.55

679 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1422 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3
Multiples : 1

Stock Image

BST52.115
Nexperia

3 : USD 0.5031
25 : USD 0.4368
52 : USD 0.3133
142 : USD 0.2964

Read More Specifications

     
Manufacturer
Product Category
Kind Of Transistor
Mounting
Case
Polarisation
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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Additional Infomation About Product

BST52.115 is a N-Channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from Nexperia. It is a 200 V device, with a 0.13 ohm on-state resistance (RDSon). The maximum continuous Drain-Source voltage is -200 V and the maximum Pulse Drain-Source Voltage is -400 V. It has a 6.5 A maximum Continuous Drain Current and a 20 A maximum Pulse Drain Current. The maximum allowable junction temperature is 150 degrees Celsius and it is packaged in the TO-220AB package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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