Product Information

BSS84AKM,315

BSS84AKM,315 electronic component of Nexperia

Datasheet
P-Channel 50 V 230mA (Ta) 340mW (Ta), 2.7W (Tc) Surface Mount SOT-883

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.055 ea
Line Total: USD 550

9700 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
3375 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

BSS84AKM,315
Nexperia

5 : USD 0.1127
50 : USD 0.0896
150 : USD 0.0744
500 : USD 0.0705
2500 : USD 0.0672
5000 : USD 0.0657

12554 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 162
Multiples : 1

Stock Image

BSS84AKM,315
Nexperia

162 : USD 0.0704
250 : USD 0.0701
500 : USD 0.07
1000 : USD 0.0687

19400 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10000
Multiples : 10000

Stock Image

BSS84AKM,315
Nexperia

10000 : USD 0.0564

9700 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 10000
Multiples : 10000

Stock Image

BSS84AKM,315
Nexperia

10000 : USD 0.055

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Brand
Forward Transconductance - Min
Factory Pack Quantity :
Configuration
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---50 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =-10 V T =25C ---230mA D GS amb Static characteristics R drain-source on-state V =-10 V I =-100mA -4.5 7.5 DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .BSS84AKM Nexperia 50 V, 230 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 2 3 D drain Transparent G top view SOT883 (SOT883) S sym146 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AKM SOT883 leadless ultra small plastic package 3 solder lands SOT883 body 1.0 x 0.6 x 0.5 mm 4. Marking Table 4. Marking codes 1 Type number Marking code BSS84AKM ZA 1 % = placeholder for manufacturing site code BSS84AKM All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 23 May 2011 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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