BSS138BKS

BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1.5 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T =25C - - 60 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V -- 320mA D GS T =25C amb Static characteristics (per transistor) R drain-source on-state V =10V -1 1.6 DSon GS resistance I =320 mA T =25C D j 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .BSS138BKS NXP Semiconductors 60 V, 320 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 D1 D2 4 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 132 5 G2 gate TR2 SOT363 (TSSOP6) 6D1 drain TR1 S1 S2 017aaa256 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS138BKS TSSOP6 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code BSS138BKS LG% 1 % = placeholder for manufacturing site code. BSS138BKS All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 12 August 2011 2 of 17