Product Information

BSP89.115

BSP89.115 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET; unipolar; 240V; 0.375A; 1.5W; SOT223
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9893 ea
Line Total: USD 0.99

408 - Global Stock
Ships to you between
Tue. 14 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
84 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

BSP89.115
Nexperia

1 : USD 0.923
5 : USD 0.4316
25 : USD 0.3887
48 : USD 0.3406
131 : USD 0.3224

Read More Specifications

     
Manufacturer
Product Category
Polarisation
Mounting
Kind Of Package
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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Additional Infomation About Product

BSP89.115 is a N-channel enhancement mode MOSFET device developed by Nexperia. It is a surface mount package with a single gate, drain and source. This device has a low on-resistance, high speed switching, and low gate drive. It is suitable for a wide range of switching and general purpose applications. It has a drain-to-source voltage of 500 V, a drain-current of -1.2 A and a gate-threshold voltage of 2.2 V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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