X-On Electronics has gained recognition as a prominent supplier of BSP250.115 mosfet across the USA, India, Europe, Australia, and various other global locations. BSP250.115 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BSP250.115

BSP250.115 electronic component of Nexperia
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Part No.BSP250.115
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET SOT223 RoHS
BSP250.115 is a NPN bipolar switching transistors, suitable for high frequency switching and amplifying.
Datasheet: BSP250.115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1108 ea
Line Total: USD 1.11

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 03 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1547
5 : USD 0.7802
25 : USD 0.5893
34 : USD 0.446
92 : USD 0.4222

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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We proudly offer the BSP250.115 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the BSP250.115 MOSFET.

74HC The Nexperia 74HC BSP250.115 is a replacement field effect transistor that can be used in a wide range of applications. Its package contains a single N-channel MOSFET with an RDS(on) of 16 milliohms (max) and an operating temperature range of -40°C to +125°C. The device features a gate-source voltage (VGS) of 10V (max), an avalanche voltage (VDSS) of 30V (max) and a continuous drain current (ID) of 200mA (max). It has a maximum total gate charge (Qg) of 11nC and a maximum input capacitance (Ciss) of 38pF. This transistor can be used in circuits that require switching, amplification, and overvoltage protection.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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