Product Information

BSP100,135

BSP100,135 electronic component of Nexperia

Datasheet
Trans MOSFET N-CH 30V 3.2A 4-Pin(3+Tab) SC-73 T/R

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.2597 ea
Line Total: USD 1038.8

0 - Global Stock
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 4000
Multiples : 4000

Stock Image

BSP100,135
Nexperia

4000 : USD 0.2597
8000 : USD 0.2429

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

BSP100,135
Nexperia

1 : USD 0.7603
10 : USD 0.6475

0 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May


Multiples : 1

Stock Image

BSP100,135
Nexperia


0 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 34
Multiples : 1

Stock Image

BSP100,135
Nexperia

34 : USD 0.4721
100 : USD 0.3865
250 : USD 0.3733
500 : USD 0.3694
1000 : USD 0.3653

     
Manufacturer
Product Category
Packaging
Channel Mode
Gate-Source Voltage Max
Power Dissipation
Mounting
Continuous Drain Current
Type
Drain-Source On-Res
Operating Temp Range
Pin Count
Operating Temperature Classification
Drain-Source On-Volt
Package Type
Number Of Elements
Rad Hardened
Polarity
LoadingGif

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of Philips Semiconductors Product specification N-channel enhancement mode BSP100 TrenchMOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V = 30 V DSS Low on-state resistance Fast switching I = 6 A D High thermal cycling performance Low thermal resistance R 100 m (V = 10 V) g DS(ON) GS R 200 m (V = 4.5 V) DS(ON) GS s GENERAL DESCRIPTION PINNING SOT223 N-channel enhancement mode PIN DESCRIPTION 4 field-effect transistor in a plastic envelope using trench 1 gate technology. 2 drain Applications:- Motor and relay drivers 3 source d.c. to d.c. converters Logic level translator 4 drain (tab) 1 23 The BSP100 is supplied in the SOT223 surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage T = 25 C to 150C - 30 V DSS j V Drain-gate voltage T = 25 C to 150C R = 20 k -30 V DGR j GS V Gate-source voltage - 20 V GS 1 I Continuous drain current T = 25 C - 6 A D sp T = 100 C - 4.4 A sp T = 25 C - 3.2 A amb I Pulsed drain current T = 25 C - 24 A DM sp P Total power dissipation T = 25 C - 8.3 W D sp T, T Operating junction and - 65 150 C j stg storage temperature THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance junction to surface mounted, FR4 12 15 K/W th j-sp solder point board R Thermal resistance junction to surface mounted, FR4 70 - K/W th j-amb ambient board 1 Continuous current rating limited by package February 1999 1 Rev 1.000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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