Product Information

BCV61

BCV61 electronic component of Nexperia

Datasheet
TRANS, NPN, 30V, 100MHZ, SOT143B-4
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.6644 ea
Line Total: USD 3.32

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 5
Multiples : 1

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BCV61
Nexperia

5 : USD 0.4126
50 : USD 0.3139
100 : USD 0.2296
500 : USD 0.1608
1500 : USD 0.1583

Read More Specifications

     
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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Additional Infomation About Product

BCV61 NPN general-purpose double transistors Rev. 04 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEITA BCV61 SOT143B - BCV62 BCV61A BCV62A BCV61B BCV62B BCV61C BCV62C 1.2 Features Low current (max. 100 mA) Low voltage (max. 30 V) Matched pairs 1.3 Applications Applications with working point independent of temperature Current mirrors 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 collector TR2 4 3 4 3 base TR1 and TR2 2 collector TR1 TR2 TR1 3emitterTR1 4emitterTR2 1 2 12 006aaa842BCV61 NXP Semiconductors NPN general-purpose double transistors 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BCV61 - plastic surface-mounted package 4 leads SOT143B BCV61A BCV61B BCV61C 4. Marking Table 4. Marking codes 1 Type number Marking code BCV61 1M* BCV61A 1J* BCV61B 1K* BCV61C 1L* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 30 V CBO V collector-emitter voltage open base - 30 V CEO V emitter-base voltage V =0V - 6 V EBS CE I collector current - 100 mA C I peak collector current - 200 mA CM I peak base current - 200 mA BM Per device 1 P total power dissipation T 25 C -250 mW tot amb T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB). BCV61 4 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 18 December 2009 2 of 13

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