Product Information

BCM857QASZ

BCM857QASZ electronic component of Nexperia

Datasheet
Trans BJT Array Dual PNP 45V 0.1A 6-Pin DFN T/R
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2725 ea
Line Total: USD 0.27

24395 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
58 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

BCM857QASZ
Nexperia

1 : USD 0.7071
10 : USD 0.5841
30 : USD 0.5218
100 : USD 0.4593
500 : USD 0.4029
1000 : USD 0.3827

24395 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

BCM857QASZ
Nexperia

1 : USD 0.2725
10 : USD 0.2001
100 : USD 0.1426
1000 : USD 0.1138
5000 : USD 0.1081
10000 : USD 0.1081
25000 : USD 0.1081
50000 : USD 0.1035
100000 : USD 0.1024

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

BCM857QAS 45 V, 100 mA PNP/PNP matched double transistors 24 April 2018 Product data sheet 1. General description PNP/PNP matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: BCM847QAS 2. Features and benefits Reduces component count Reduces pick and place costs Low package height of 0.37 mm Current gain matching Base-emitter voltage matching Application-optimized pinout AEC-Q101 qualified 3. Applications Current mirror Differential amplifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -45 V CEO voltage I collector current - - -100 mA C I peak collector current t 1 ms single pulse - - -200 mA CM p h DC current gain V = -5 V I = -2 mA T = 25 C 200 290 450 FE CE C amb Per device h /h DC current gain V = -5 V I = -2 mA T = 25 C 0.95 1 1.05 FE1 FE2 CE C amb matching V V base-emitter voltage 1 - - 2 mV BE1 BE2 matching 1 The smaller of the two values is subtracted from the larger value.Nexperia BCM857QAS 45 V, 100 mA PNP/PNP matched double transistors 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 1 6 2 B1 base TR1 7 TR2 3 C2 collector TR2 TR1 2 5 4 E2 emitter TR2 8 3 4 1 2 3 5 B2 base TR2 sym018 6 C1 collector TR1 Transparent top view 7 C1 collector TR1 DFN1010B-6 (SOT1216) 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BCM857QAS DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code BCM857QAS C 011 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE A 110 aaa-019766 VENDOR CODE Fig. 1. DFN1010B-6 (SOT1216) binary marking code description BCM857QAS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 24 April 2018 2 / 11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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