Product Information

BC55PAS

BC55PAS electronic component of Nexperia

Datasheet
TRANSISTOR, BIPOLAR, AEC-Q101, NPN, 60V

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5786 ea
Line Total: USD 2.89

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1

Stock Image

BC55PAS
Nexperia

5 : USD 0.4192
10 : USD 0.3079
100 : USD 0.1837
500 : USD 0.1526
1000 : USD 0.1215
5000 : USD 0.11

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Product Range
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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BC54PAS BC55PAS BC56PAS 45V/60V/80V, 1A NPN medium power transistors Rev. 1 11 November 2014 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Table 1. Product overview 1 Type number Package PNP complement BC54PAS DFN2020D-3 SOT1061D BC51PAS BC55PAS BC52PAS BC56PAS BC53PAS 1 Valid for all available selection groups. 1.2 Features and benefits High collector current capability I and Three current gain selections C I CM Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic area requirements package with medium power capability Exposed heat sink for excellent thermal Suitable for Automatic Optical and electrical conductivity Inspection (AOI) of solder joint AEC-Q101 qualified 1.3 Applications Linear voltage regulators Low-side switches Battery driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base CEO BC54PAS --45 V BC55PAS --60 V BC56PAS --80 V I collector current - - 1 A C DFN2020D-3BC54PAS BC55PAS BC56PAS NXP Semiconductors 45V/60V/80V, 1A NPN medium power transistors Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit I peak collector current single pulse t 1ms --2 A CM p 1 h DC current gain V =2V I =150 mA 63 - 250 FE CE C 1 h selection -10 V =2V I =150 mA 63 - 160 FE CE C 1 h selection -16 V =2V I =150 mA 100 - 250 FE CE C 1 Pulse test: t 300 s 0.02 p 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 2 sym021 12 Transparent top view 3. Ordering information Table 4. Ordering information 1 Type number Package Name Description Version BC54PAS DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outline SOT1061D package no leads 3 terminals body 2 2 0.65 mm. BC55PAS BC56PAS 1 Valid for all available selection groups. BC54 55 56PAS SER All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 1 11 November 2014 2 of 14

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