Product Information

BAS45A

BAS45A electronic component of Nexperia

Datasheet
DIODE, LOW LEAKAGE, DO-34

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3429 ea
Line Total: USD 1.71

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 5
Multiples : 1

Stock Image

BAS45A
Nexperia

5 : USD 0.3429
100 : USD 0.1608
1000 : USD 0.1281
2500 : USD 0.1169

     
Manufacturer
Product Category
Brand
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No. Of Pins
Product Range
Svhc
Current If @ Vf
Current Ifsm
Forward Voltage
Junction Temperature Tj Max
Power Dissipation Ptot Max
Reverse Recovery Time Trr Typ
Termination Type
LoadingGif

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 BAS45A Low-leakage diode Product data sheet 1996 Mar 13 Supersedes data of June 1994 NXP Semiconductors Product data sheet Low-leakage diode BAS45A FEATURES DESCRIPTION Continuous reverse voltage: Epitaxial medium-speed switching diode with a low leakage current in a max. 125 V hermetically-sealed glass SOD68 (DO-34) package. Repetitive peak forward current: max. 625 mA Low reverse current: max. 1 nA k a handbook, halfpage Switching time: typ. 1.5 s. MAM156 APPLICATION Fig.1 Simplified outline (SOD68 DO-34) and symbol. Low leakage current applications. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V repetitive peak reverse voltage 125 V RRM V continuous reverse voltage 125 V R I continuous forward current see Fig.2 note 1 250 mA F I repetitive peak forward current 625 mA FRM I non-repetitive peak forward current square wave T = 25 C prior to FSM j surge see Fig.4 t = 1 s 4 A p t = 1 ms 1 A p t = 1 s 0.5 A p P total power dissipation T = 25 C 300 mW tot amb T storage temperature 65 +175 C stg T junction temperature 175 C j Note 1. Device mounted on a printed-circuit board without metallization pad. 1996 Mar 13 2

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