Product Information

935153620510-T1O

935153620510-T1O electronic component of Murata

Datasheet
Silicon RF Capacitors / Thin Film 10nF 0303 26GHz BV50 UWSC Vert Wirebond

Manufacturer: Murata
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1
1 : USD 5.0173
10 : USD 4.4491
50 : USD 3.7838
100 : USD 3.5967
200 : USD 3.0908
500 : USD 2.8205
1000 : USD 2.1552
2500 : USD 2.0632
5000 : USD 2.0632
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Capacitance
Voltage Rating
Tolerance
Case Code - in
Case Code - mm
Operating Temperature Range
Length
Width
Height
Packaging
Package / Case
Product
Temperature Coefficient
Termination Style
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Cnhts
Hts Code
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UWSC Ultra large-band Wire bonding Silicon Capacitor Wire Bondable Vertical Rev 1.5 Key Features Key Applications Ultra largeband performance up to 26 GHz Optoelectronics/high-speed data Resonance free Trans-Impedance Amplifiers (TIA) Phase stability Receive-and-Transmit Optical Sub-Assembly Unique capacitance value of 1nF in 0101 (ROSA/TOSA) Synchronous Optical Networking (SONET) Ultra high stability of capacitance value over: - Temperature < 0.5% (-55C to +150C) High speed digital logic - Voltage < 0.02 %/V Broadband test equipment - Aging < 0.001%/1000 hours Broadband microwave/millimeter wave Ultra low ESR and ESL Replacement of X7R and NP0 High reliability (FIT < 0.017 parts/billion hours) Low profile applications (250 m, 100 m on Compatible with standard wire bonding assembly request) (ball and wedge)* * Please refer to our Assembly Application Note for more details UWSC Capacitors target optical communication The UWSC capacitors provide very high reliabili- systems (ROSA/TOSA, SONET and all optoelec- ty and capacitance stability over temperature tronics) as well as high speed data systems or (0.5%) and voltage. They have an extended ope- products. The UWSC are designed for DC decou- rating temperature range from -55 to 150C . Re- pling and bypass applications. The unique techno- liable and repeatable performances are obtai- logy of integrated passive devices in silicon deve- ned thanks to a fully controlled production line loped by IPDiA, offers high rejection up to with high temperature curing (above 900C) gene- 26GHz. The UWSC capacitors are manufactured rating a highly pure oxide. These capacitors are with both deep trench and MOS semiconductor compatible with standard wire bonding assembly processes to cover low and high capacitance re- (ball and wedge). They are RoHS-compliant and quirements. are available with thick gold terminations. IPDiA Capacitors UWSC Series Electrical Specifications Case Size Parameters Value Part number Product description Thickness (**) Capacitance range 10pF to 100 nF Ultra largeband Wire bondable vertical Silicon Capacitor, (**) UWSC.xxx Capacitance tolerance 15 % from -55 to 150C, 26GHz with Au termination Operating temperature range -55 C to 150 C Ultra largeband Wire bondable vertical Si Cap 935 153 622 410 0101 250m Storage temperature - 70 C to 165 C 1nF, BV>50V Temperature coefficient <0.5 %, from -55 C to +150 C Ultra largeband Wire bondable vertical Si Cap (**) 935 153 620 510 0303 250m Breakdown voltage (BV) 11, 30, 50, 150, 450 V 10nF, BV>50V Capacitance variation 0.02 %/V (from 0 V to RVDC) Ultra largeband Wire bondable vertical Si Cap 935 153 624 522 0504 250m versus RVDC 22nF, BV>50V Equivalent Serial Inductance (***) typ 6 pH SRF Ultra largeband Wire bondable vertical Si Cap (ESL) 935 153 821 510 0202 250m 10nF, BV>30V Equivalent Serial Resistance (***) typ. 14 m Ultra largeband low profile Wire bondable vertical Si Cap (ESR) 0101 935 154 622 410 100m 1 nF, BV>50V Insulation resistance 100 G min RVDC & +25C Ultra largeband low profile Wire bondable vertical Si Cap Aging Negligible, < 0.001 % / 1000h 0303 935 154 620 510 100m 10nF, BV>50V Reliability FIT<0.017 parts / billion hours, Ultra largeband low profile Wire bondable vertical Si Cap Capacitor height Max 250 m or 100 m 0202 935 154 821 510 100m 10nF, BV>30V (**) Other values on request (***) e.g. 10nF/0303/BV 50V 25C Fig.1: Capacitance variation vs temperature Fig.2: Capacitance variation vs DC biasing Fig.3: 10 nF/0303 UWSC measurement results voltage (for UWSC and MLCC technologies) (for UWSC and MLCC technologies) (S-parameters in shunt mode) UWSC Capacitance Range Available parts see table above For other values, contact your IPDiA sales representative Termination and Outline Termination Package Outline Can be directly mounted on the PCB using Pad dimension Case size (typ. 0.01mm) W ( mm ) die bonding and wire bonding. a b L W T (*) (*) Bottom electrode in Ti/Ni/Au and top elec- 0101 >0.15 >0.15 0.25 0.25 L a 0201 >0.40 >0.15 0.50 0.25 trode in Ti/Cu/Ni/Au. Other top finishings 0.25 0202 >0.40 >0.40 0.50 0.50 (standard available on request (ex: 3m Al/Si/Cu). >0.70 >0.70 0.80 0.80 profile) or 0303 b Compatible with standard wire bonding 0.10 (low T 0404 >0.94 >0.94 1.04 1.04 profile) assembly (ball and wedge). 0503 >1.17 >0.72 1.27 0.82 0504 >1.28 >0.92 1.38 1.02 Packing Tape and reel, waffle pack, film frame carrier or raw wafer delivery. For more information, please visit:

Tariff Desc

8532.25.00 45 no--Dielectric of paper or plastics Free

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Tokyo Parts Industrial Group

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