MP86963 TM High Efficiency, 20A, 27V Intelli-Phase Solution (Integrated HS/LS FETs and Driver) in a 5x5mm QFN PATENTS PENDING CONTROLLED DOCUMENT DESCRIPTION FEATURES The MP86963 is a monolithic Half Bridge with Wide 4.5V to 21V Operating Input Range built-in internal power MOSFETs and gate 20A Output Current driver. It achieves 20A continuous output Simple Logic Interface (3.3V) current over a wide input supply range. Operate from 100kHz to 1MHz Accepts 3-state PWM Input Integrating the Driver and MOSFETs results in Suitable for single-/multi-phase operation high efficiency due to optimal dead time control Available in a 5mm x 5mm TQFN Package and parasitic inductance reduction. ROHS6 Compliant The MP86963 is a Monolithic IC designed to drive up to 20A per phase. Housed in a very APPLICATIONS small 5x5mm TQFN Packge, this device can be Power modules operated from 100kHz to 1MHz operation. Notebook, Core Voltage The IC is intended to work with 3.3V tri-state Graphic Card Core Regulators output controllers. All MPS parts are lead-free and adhere to the RoHS directive. For MPS green status, please visit MPS website under Quality Assurance. MPS and The The MP86963 is ideal for notebook applications Future of Analog IC Technology are Registered Trademarks of Monolithic where efficiency and small size are a premium. Power Systems, Inc. This Product is Patent Pending. TYPICAL APPLICATION MP86963 Rev.1.22 www.MonolithicPower.com 1 8/19/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2020 MPS. All Rights Reserved. TM MP86963 20A, 27V INTELLI-PHASE SOLUTION INTEGRATED HS/LS FETS AND DRIVER IN A 5X5mm QFN PATENTS PENDING CONTROLLED DOCUMENT ORDERING INFORMATION Part Number* Package Top Marking Free Air Temperature(T ) A MP86963DUT 5x5 TQFN 86963UT -40C to +85C * For Tape & Reel, add suffix Z (e.g. MP86963DUTZ) For RoHS compliant packaging, add suffix LF (e.g. MP86963DUTLFZ) PACKAGE REFERENCE (4) (1) Thermal Resistance JA JC ABSOLUTE MAXIMUM RATINGS 5x5 TQFN .............................. 33 ....... 8 .... C/W Supply Voltage V ....................................... 27V IN V (DC) ................................ -0.3V to V +0.3V SW IN Notes: 1) Exceeding these ratings may damage the device. V (20ns) ................................... -3V to V +3V SW IN 2) The maximum allowable power dissipation is a function of the V .....................................................V + 6V BST SW maximum junction temperature T (MAX), the junction-to- J All Other Pins ................................. -0.3V to +6V ambient thermal resistance , and the ambient temperature JA (2) T . The maximum allowable continuous power dissipation at A Continuous Power Dissipation (TA = +25C) any ambient temperature is calculated by P (MAX)=(T (MAX)- D J ............................................................ 3.8W T )/ . Exceeding the maximum allowable power dissipation A JA Junction Temperature .............................. 150C will cause excessive die temperature. 3) The device is not guaranteed to function outside of its Lead Temperature ................................... 260C operating conditions. Storage Temperature ............... -65C to +150C 4) Measured on JESD51-7, 4-layer PCB. (3) Recommended Operating Conditions Supply Voltage V .......................... 4.5V to 21V IN V Driver Voltage.4.5V to 5.5V CC Operating Junct. Temp (T ) ...... -40C to +125C J MP86963 Rev.1.22 www.MonolithicPower.com 2 8/19/2020 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2020 MPS. All Rights Reserved.