Product Information

4N32

4N32 electronic component of Misc

Datasheet
Transistor Output Optocouplers Photodarlington Out

Manufacturer: Misc
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 1.2252 ea
Line Total: USD 30.63

0 - Global Stock
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 25
Multiples : 1

Stock Image

4N32
Misc

25 : USD 1.2252
50 : USD 1.0384
100 : USD 0.9154

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Type
Package / Case
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Input Type
Output Device
Brand
Number Of Channels Per Chip
Factory Pack Quantity :
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4N32, 4N33 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES 1 6 A B Very high current transfer ratio, 500 % min. 11 High isolation resistance, 10 typical C 2 5 C Standard plastic DIP package NC 3 4 E Compliant to RoHS Directive to 2002/95/EC i179005_1 and in accordance WEEE 2002/96/EC V DE AGENCY APPROVALS i179005 UL1577, file no. E52744 system code H DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 DESCRIPTION (pending), avialable with option 1 The 4N32 and 4N33 are optically coupled isolators with a BSI IEC60950; IEC60065 gallium arsenide infrared LED and a solicon photodarlington FIMKO sensor. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. ORDERING INFORMATION DIP Option 6 4 N 3# - X 0## T 10.16 mm 7.62 mm PART NUMBER PACKAGE OPTION TAPE AND REEL Option 7 Option 9 > 0.1 mm > 0.7 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, BSI, FIMKO 500 500 DIP-6 4N32 4N33 DIP-6, 400 mil, option 6 4N32-X006 - (1) (1) SMD-6, option 7 4N32-X007T 4N33-X007T (1) (1) SMD-6, option 9 4N32-X009T 4N33-X009T VDE, UL, BSI, FIMKO 500 500 DIP-6 4N32-X001 4N33-X001 (1) SMD-6, option 7 4N32-X017T 4N33-X017T Notes Additional options may be possible, please contact sales office. (1) Also available in tubes, do not put T on the end. Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev. 1.2, 15-Feb-11 1 4N32, 4N33 Optocoupler, Photodarlington Vishay Semiconductors Output, High Gain, with Base Connection ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 3V R Forward current I 60 mA F Power dissipation P 100 mW diss Derate linearly from 55 C 1.33 mW/C OUTPUT Collector emitter breakdown voltage BV 30 V CEO Emitter base breakdown voltage BV 8V EBO Collector base breakdown voltage BV 50 V CBO Emitter collector breakdown voltage BV 5V ECO Collector (load) current I 100 mA C Power dissipation P 150 mW diss Derate linearly 2mW/C COUPLER Total dissipation P 250 mW tot Derate linearly 3.3 mW/C Isolation test voltage (between emitter 1 s V 5300 V ISO RMS Leakage path 7 mm min. Air path 7 mm min. 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 55 to + 150 C stg Operating temperature T - 55 to + 100 C amb (1) Lead soldering time at 260 C 10 s Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.25 1.5 V F F Reverse current V = 3 V I 0.1 100 A R R Capacitance V = 0 V C 25 pF R O OUTPUT (1) Collector emitter breakdown voltage I = 100 A, I = 0 BV 30 V C F CEO (1) Collector base breakdown voltage I = 100 A, I = 0 BV 50 V C F CBO (1) Emitter base breakdown voltage I = 100 A, I = 0 BV8V C F EBO (1) Emitter collector breakdown voltage I = 100 A, I = 0 BV 510 V C F ECO Collector emitter leakage current V = 10 V, I = 0 I 1 100 nA CE F CEO I = 0.5 mA, V = 5 V h 13 C CE FE COUPLER Collector emitter saturation voltage V 1V CEsat Coupling capacitance 1.5 pF Notes Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (1) Indicates JEDEC registered values. www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 81865 2 Rev. 1.2, 15-Feb-11

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

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