Product Information

N25Q128A13ESFA0F

N25Q128A13ESFA0F electronic component of Micron

Datasheet
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 16M x 8 7ns Automotive 16-Pin SO W T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

14: USD 4.7081 ea
Line Total: USD 65.91

0 - Global Stock
MOQ: 14  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 14
Multiples : 1
14 : USD 4.7081
25 : USD 4.5311
100 : USD 3.9268
250 : USD 3.808
500 : USD 3.6057

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Programmable
Deleted
Access Time Max
Address Bus
Boot Type
Operating Temp Range
Pin Count
Density
Operating Temperature Classification
Rad Hardened
Operating Supply Voltage Typ
Cell Type
LoadingGif

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N25Q128 128Mb 3V, Multiple I/O, 4KB Subsector Erase, XiP Enabled, Serial Flash Memory with 108 MHz SPI Bus Interface JEDEC standard two-byte signature Features (BA18h) SPI-compatible serial bus interface Additional 2 Extended Device ID (EDID) bytes to identify device factory options 108 MHz (maximum) clock frequency Unique ID code (UID) with 14 bytes read- 2.7 V to 3.6 V single supply voltage only Supports legacy SPI protocol and new Quad More than 100,000 program/erase cycles per I/O or Dual I/O SPI protocol sector Quad/Dual I/O instructions resulting in an More than 20 years data retention equivalent clock frequency up to 432 MHz: Packages (all packages RoHS compliant) XIP mode for all three protocols F7 = VDFPN8 6 x 5 mm Sawn (MLP 6 x 5 Configurable via volatile or non-volatile Sawn) registers: enables XiP mode directly after F8 = VDFPN8 8 x 6 mm (MLP8) power on 12 = TBGA24 6 x 8 mm Program/Erase suspend instructions SE = SO8W (SO8 208 mils body width) Continuous read (entire memory) via single SF = SO16 (300 mils body width) instruction: Fast Read Quad or Dual Output Fast Read Quad or Dual I/O Fast Read Flexible to fit application: Configurable number of dummy cycles Output buffer configurable Reset function (upon customer request) 64-byte user-lockable, one-time programmable (OTP) area Erase capability Subsector (4-Kbyte) granularity in the entire memory array Sector (64-Kbyte) granularity Write protections Software write protection applicable to every 64-Kbyte sector (volatile lock bit) Hardware write protection: protected area size defined by non-volatile bits (BP0, BP1, BP2, BP3 and TB bit) Additional smart protections available upon customer request Electronic signature February 2011 Rev 7 1/157 Micron Technology, Inc., reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved.Contents N25Q128 - 3 V Contents 1 Description 12 2 Signal descriptions . 15 2.1 Serial data output (DQ1) . 15 2.2 Serial data input (DQ0) . 15 2.3 Serial Clock (C) 15 2.4 Chip Select (S) . 15 2.5 Hold (HOLD) or Reset (Reset) . 16 2.6 Write protect/enhanced program supply voltage (W/VPP), DQ2 . 17 2.7 V supply voltage 17 CC 2.8 V ground 17 SS 3 SPI Modes 18 4 SPI Protocols 20 4.1 Selecting and Enabling a Protocol 20 4.2 Exiting DIO-SPI or QIO-SPI Protocols . 20 4.3 Extended SPI protocol . 20 4.4 Dual I/O SPI (DIO-SPI) protocol 20 4.5 Quad SPI (QIO-SPI) protocol 21 5 Operating features . 23 5.1 Extended SPI Protocol Operating features . 23 5.1.1 Read Operations 23 5.1.2 Page programming 23 5.1.3 Dual input fast program . 23 5.1.4 Dual Input Extended Fast Program 23 5.1.5 Quad Input Fast Program . 24 5.1.6 Quad Input Extended Fast Program . 24 5.1.7 Subsector erase, sector erase and bulk erase . 24 5.1.8 Polling during a write, program or erase cycle 24 5.1.9 Active power and standby power modes 25 5.1.10 Hold (or Reset) condition 25 2/157 Micron Technology, Inc., reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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