Product Information

MT8LSDT3264AY133D2

MT8LSDT3264AY133D2 electronic component of Micron

Datasheet
DRAM Module SDRAM 256Mbyte 168UDIMM

Manufacturer: Micron
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2: USD 26.9038 ea
Line Total: USD 53.81

0 - Global Stock
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 2
Multiples : 1
2 : USD 26.9038

     
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256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM Features Synchronous DRAM Module MT8LSDT3264A(I) - 256MB MT16LSDT6464A(I) - 512MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Figure 1: 168-Pin DIMM (MO161) Features PC100- and PC133-compliant Low Profile 1.125in. (28.575mm)  168-pin, dual in-line memory module (DIMM)  Utilizes 125 MHz and 133 MHz SDRAM components  Unbuffered  256MB (32 Meg x 64), 512MB (64 Meg x 64)  Single +3.3V 0.3V power supply  Fully synchronous; all signals registered on positive edge of system clock Options Marking  Internal pipelined operation; column address can Package be changed every clock cycle 168-pin DIMM (standard) G  Internal SDRAM banks for hiding row access/ 1 168-pin DIMM (lead-free) Y precharge  Operating Temperature Range  Programmable burst lengths: 1, 2, 4, 8, or full page Commercial (0C to +70C) None  Auto Precharge, including Concurrent Auto 1, 2 Industrial (-40C to +85C) I Precharge, and Auto Refresh Modes  Memory Clock/CAS Latency  64ms, 8,192 cycle Auto Refresh cycle (133 MHz)/CL = 2 -13E  Self Refresh Mode (133 MHz)/CL = 3 -133  LVTTL-compatible inputs and outputs 1 (100 MHz)/CL = 2 -10E  Serial Presence-Detect (SPD) PCB  Gold edge contacts Low profile 1.125in. (28.575mm) See page 2 note Table 1: Timing Parameters Notes: 1. Consult Micron for product availability. 2. Industrial Temperature Option available in - Access Time Module Clock Setup Hold 133 speed only. Marking Frequency CL = 2 CL = 3 Time Time -13E 133 MHz 5.4ns 1.5 0.8 -133 133 MHz 5.4ns 1.5 0.8 -10E 100 MHz 9ns 7.5ns 2ns 1ns Table 2: Address Table 256MB 512MB Refresh Count 8K 8K Device Banks 4 (BA0, BA1) 4 (BA0, BA1) Device Configuration 256Mb (32 Meg x 8) 256Mb (32 Meg x 8) Row Addressing 8K (A0A12) 8K (A0A12) 1K (A0A9) 1K (A0A9) Column Addressing Module Ranks 1 (S0,S2) 2 (S0,S2; S1,S3) PDF: 09005aef807b3771/Source: 09005aef807b37b5 Micron Technology, Inc., reserves the right to change products or specifications without notice. SD8_16C32_64x64AG.fm - Rev. D 3/05 EN 1 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM Pin Assignments and Descriptions Table 3: Part Numbers Part Number Module Density Configuration System Bus Speed MT8LSDT3264AG-13E_ 256MB 32 Meg x 64 133 MHz MT8LSDT3264AY-13E_ 256MB 32 Meg x 64 133 MHz MT8LSDT3264A(I))G-133_ 256MB 32 Meg x 64 133 MHz MT8LSDT3264A(I)Y-133_ 256MB 32 Meg x 64 133 MHz MT8LSDT3264AG-10E_ 256MB 32 Meg x 64 100 MHz MT8LSDT3264AY-10E_ 256MB 32 Meg x 64 100 MHz MT16LSDT6464AAG-13E_ 512MB 64 Meg x 64 133 MHz MT16LSDT6464AY-13E_ 512MB 64 Meg x 64 133 MHz MT16LSDT6464A(I)G-133_ 512MB 64 Meg x 64 133 MHz MT16LSDT6464A(I)Y-133_ 512MB 64 Meg x 64 133 MHz MT16LSDT6464AG-10E_ 512MB 64 Meg x 64 100 MHz MT16LSDT6464AY-10E_ 512MB 64 Meg x 64 100 MHz Note: The designators for component and PCB revision are the last two characters of each part number. Consult factory for current revision codes. Example: MT8LSDT3264AG-133D2. Pin Assignments and Descriptions Table 4: Pin Assignment (168-Pin DIMM Front) Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1VSS 22 NC 43 VSS 64 VSS 2DQ0 23 VSS 44 NC 65 DQ21 3DQ1 24 NC 45 S2# 66 DQ22 4DQ2 25 NC 46 DQMB2 67 DQ23 5DQ3 26 VDD 47 DQMB3 68 VSS 6VDD 27 WE# 48 NC 69 DQ24 7DQ4 28 DQMB0 49 VDD 70 DQ25 8DQ5 29 DQMB1 50 NC 71 DQ26 9DQ6 30 S0# 51 NC 72 DQ27 10 DQ7 31 NC 52 NC 73 VDD 11 DQ8 32 VSS 53 NC 74 DQ28 12 VSS 33 A0 54 VSS 75 DQ29 13 DQ9 34 A2 55 DQ16 76 DQ30 14 DQ10 35 A4 56 DQ17 77 DQ31 15 DQ11 36 A6 57 DQ18 78 VSS 16 DQ12 37 A8 58 DQ19 79 CK2 17 DQ13 38 A10 59 VDD 80 NC 18 VDD 39 BA1 60 DQ20 81 NC 19 DQ14 40 VDD 61 NC 82 SDA 20 DQ15 41 VDD 62 NC 83 SCL 21 NC 42 CK0 63 CKE1 84 VDD PDF: 09005aef807b3771/Source: 09005aef807b37b5 Micron Technology, Inc., reserves the right to change products or specifications without notice. SD8_16C32_64x64AG.fm - Rev. D 3/05 EN 2 2003 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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