256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM Features DDR2 SDRAM SODIMM MT4HTF3264HZ 256MB MT4HTF6464HZ 512MB MT4HTF12864HZ 1GB Figure 1: 200-Pin SODIMM (MO-224 R/C C) Features Module height: 30mm (1.181in) 200-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB (128 Meg x 64) V = V = 1.8V DD DDQ V = 1.73.6V DDSPD JEDEC-standard 1.8V I/O (SSTL 18-compatible) Differential data strobe (DQS, DQS ) option Options Marking 4n-bit prefetch architecture Operating temperature Multiple internal device banks for concurrent opera- Commercial (0C T +70C) None tion A 1 Industrial (40C T +85C) I A Programmable CAS latency (CL) Package Posted CAS additive latency (AL) 200-pin DIMM (halogen-free) Z t WRITE latency = READ latency - 1 CK 2 Frequency/CL Programmable burst lengths (BL): 4 or 8 2.5ns CL = 5 (DDR2-800) -80E Adjustable data-output drive strength 2.5ns CL = 6 (DDR2-800) -800 3.0ns CL = 5 (DDR2-667) -667 64ms, 8192-cycle refresh On-die termination (ODT) Notes: 1. Contact Micron for industrial temperature module offerings. Halogen-free 2. CL = CAS (READ) latency. Serial presence detect (SPD) with EEPROM Gold edge contacts Single rank Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83c05a5d Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf4c32 64 128x64hz.pdf - Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM Features Table 2: Addressing Parameter 256MB 512MB 1GB Refresh count 8K 8K 8K Row address 8K A 12:0 8K A 12:0 16K A 13:0 Device bank address 4 BA 1:0 8 BA 2:0 8 BA 2:0 Device configuration 512Mb (32 Meg x 16) 1Gb (64 Meg x 16) 2Gb (128 Meg x16) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 1 S0 1 S0 1 S0 Table 3: Part Numbers and Timing Parameters 256MB 1 Base device: MT47H32M16, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF3264H(I)Z-80E 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF3264H(I)Z-800 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF3264H(I)Z-667 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 512MB 1 Base device: MT47H64M16, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF6464H(I)Z-80E 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF6464H(I)Z-800 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF6464H(I)Z-667 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT47H128M16, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF12864H(I)Z-80E 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF12864H(I)Z-800 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF12864H(I)Z-667 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4HTF6464HZ-667M1. PDF: 09005aef83c05a5d Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf4c32 64 128x64hz.pdf - Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved.