Product Information

MT48LC4M32B2P6GTR

MT48LC4M32B2P6GTR electronic component of Micron

Datasheet
DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 86-Pin TSOP-II T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 6.5676 ea
Line Total: USD 6567.6

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1000
Multiples : 1000
1000 : USD 6.5676
3000 : USD 6.4887
5000 : USD 6.4099
10000 : USD 6.331

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Maximum Clock Frequency
Access Time
Packaging
Brand
Organization
Address Bus
Mounting
Operating Temp Range
Pin Count
Density
Operating Temperature Classification
Supply Current
Rad Hardened
Operating Supply Voltage Typ
Operating Supply Voltage Min
Operating Supply Voltage Max
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128Mb: x32 SDRAM Features SDR SDRAM MT48LC4M32B2 1 Meg x 32 x 4 Banks Options Marking Features Configuration PC100-compliant 4 Meg x 32 (1 Meg x 32 x 4 banks) 4M32B2 Fully synchronous all signals registered on positive 1 Package OCPL edge of system clock 86-pin TSOP II (400 mil) TG Internal pipelined operation column address can 86-pin TSOP II (400 mil) Pb-free P be changed every clock cycle 90-ball VFBGA (8mm x 13mm) F5 Internal banks for hiding row access/precharge 90-ball VFBGA (8mm x 13mm) Pb- B5 Programmable burst lengths: 1, 2, 4, 8, or full page free Auto precharge, includes concurrent auto precharge Timing (cycle time) and auto refresh modes 2 6ns (167 MHz) -6A Self refresh mode (not available on AT devices) 3 6ns (167 MHz) -6 Auto refresh 3 7ns (143 MHz) -7 64ms, 4096-cycle refresh (commercial and Revision :G/:L industrial) Operating temperature range 16ms, 4096-cycle refresh (automotive) Commercial (0C to +70C) None LVTTL-compatible inputs and outputs Industrial (40C to +85C) IT Single 3.3V 0.3V power supply 4 Automotive (40C to +105C) AT Supports CAS latency (CL) of 1, 2, and 3 1. Off-center parting line. Notes: 2. Available only on Revision L. 3. Available only on Revision G. 4. Contact Micron for availability. Table 1: Key Timing Parameters CL = CAS (READ) latency Clock t t t t Speed Grade Frequency (MHz) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) -6A 167 3-3-3 18 18 18 -6 167 3-3-3 18 18 18 -7 143 3-3-3 20 20 21 PDF: 09005aef80872800 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 128mb x32 sdram.pdf - Rev. V 03/16 EN 2001 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb: x32 SDRAM Features Table 2: Address Table Parameter 4 Meg x 32 Configuration 1 Meg x 32 x 4 banks Refresh count 4K Row addressing 4K A 11:0 Bank addressing 4 BA 1:0 Column addressing 256 A 7:0 Table 3: 128Mb (x32) SDR Part Numbering Part Numbers Architecture MT48LC4M32B2TG 4 Meg x 32 MT48LC4M32B2P 4 Meg x 32 1 MT48LC4M32B2F5 4 Meg x 32 1 MT48LC4M32B2B5 4 Meg x 32 Note: 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef80872800 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 128mb x32 sdram.pdf - Rev. V 03/16 EN 2001 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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