Product Information

MT41K512M8DA107 AIT:P

MT41K512M8DA107 AIT:P electronic component of Micron

Datasheet
DRAM DDR3 4G 512MX8 FBGA
Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1440: USD 6.1794 ea
Line Total: USD 8898.34

0 - Global Stock
MOQ: 1440  Multiples: 1440
Pack Size: 1440

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1440
Multiples : 1
1440 : USD 10.751
14400 : USD 10.2895
144000 : USD 7.6986
720000 : USD 6.4948
1440000 : USD 6.487

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1440
Multiples : 1
1440 : USD 10.3187

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1440
Multiples : 1440
1440 : USD 6.1794
2880 : USD 6.1794
5760 : USD 6.0921

Read More Specifications

     
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Additional Infomation About Product

4Gb: x8, x16 Automotive DDR3L SDRAM Description Automotive DDR3L SDRAM MT41K512M8 64 Meg x 8 x 8 banks MT41K256M16 32 Meg x 16 x 8 banks Options Marking Description Configuration DDR3L SDRAM (1.35V) is a low voltage version of the 512 Meg x 8 512M8 DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM 256 Meg x 16 256M16 (Die Rev :E) data sheet specifications when running in FBGA package (Pb-free) x8 1.5V compatible mode. 78-ball (8mm x 10.5mm) DA FBGA package (Pb-free) x16 Features 96-ball (8mm x 14mm) TW V = V = 1.35V (1.2831.45V) DD DDQ Timing cycle time Backward compatible to V = V = 1.5V 0.075V DD DDQ 1.07ns CL = 13 (DDR3-1866) -107 Supports DDR3L devices to be backward com- Product certification patible in 1.5V applications Automotive A Differential bidirectional data strobe Operating temperature 8n-bit prefetch architecture Industrial (40C T +95C) IT C Differential clock inputs (CK, CK ) Automotive (40C T +105C) AT C 8 internal banks 3 Ultra-high (40C T +125C) UT C Nominal and dynamic on-die termination (ODT) Revision :P for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Note: Programmable posted CAS additive latency (AL) Programmable CAS (WRITE) latency (CWL) 1. Not all options listed can be combined to de- Fixed burst length (BL) of 8 and burst chop (BC) of 4 fine an offered product. Use the part catalog (via the mode register set MRS ) search on 4Gb: x8, x16 Automotive DDR3L SDRAM Description Table 2: Addressing Parameter 512 Meg x 8 256 Meg x 16 Configuration 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks Refresh count 8K 8K Row address 64K (A 15:0 ) 32K (A 14:0 ) Bank address 8 (BA 2:0 ) 8 (BA 2:0 ) Column address 1K (A 9:0 ) 1K (A 9:0 ) Page size 1KB 2KB Figure 1: DDR3L Part Numbers Example Part Number: MT41K512M8DA-107AAT:P - : MT41K Configuration Package Speed Revision :P Revision Configuration Mark 512 Meg x 8 512M8 256 Meg x 16 256M16 Temperature Mark Industrial temperature IT Package Mark Automotive temperature AT 78-ball FBGA, 8mm x 10.5mm DA Ultra-high temperature UT 96-ball FBGA, 8mm x 14mm TW Speed Grade Mark Certification Mark t CK = 1.07ns, CL = 13 107 Automotive A Note: 1. Not all options listed can be combined to define an offered product. Use the part catalog search on

HS Compliance

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:

Micron may also be referenced as

EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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