Product Information

MT40A512M16JY-083E AUT:B

MT40A512M16JY-083E AUT:B electronic component of Micron

Datasheet
MICMT40A512M16JY-083E AUT:B

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1


Multiples : 1368
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 23.2092
10 : USD 21.6216
25 : USD 21.384
50 : USD 21.384
100 : USD 19.5696
250 : USD 18.9108
500 : USD 18.9108
1000 : USD 18.2412
2000 : USD 18.2412
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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8Gb: x8, x16 Automotive DDR4 SDRAM Features Automotive DDR4 SDRAM MT40A1G8 MT40A512M16 1 Options Marking Features Configuration V = V = 1.2V 60mV DD DDQ 1 Gig x 8 1G8 V = 2.5V 125mV/+250mV PP 512 Meg x 16 512M16 On-die, internal, adjustable V generation REFDQ 78-ball FBGA package (Pb-free) x8 1.2V pseudo open-drain I/O 8mm x 12mm Rev. B WE Refresh time of 8192-cycle at T temperature range: C 7.5mm x 11mm Rev. E, R SA, AG 64ms at 40C to 85C 96-ball FBGA package (Pb-free) x16 32ms at 85C to 95C 8mm x 14mm Rev. B JY 16ms at 95C to 105C 7.5mm x 13.5mm Rev. E LY, AD 8ms at 105C to 125C 7.5mm x 13mm Rev. R TD 16 internal banks (x8): 4 groups of 4 banks each Timing cycle time 8 internal banks (x16): 2 groups of 4 banks each 0.625ns CL = 22 (DDR4-3200) -062E 8n-bit prefetch architecture 0.750ns CL = 18 (DDR4-2666) -075E Programmable data strobe preambles 0.833ns CL = 16 (DDR4-2400) -083E Data strobe preamble training Product certification Command/Address latency (CAL) Automotive A Multipurpose register read and write capability Operating temperature Write leveling Industrial (40 T 95C) IT C Self refresh mode Automotive (40 T 105C) AT C Low-power auto self refresh (LPASR) 3 Ultra-high (40 T 125C) UT C Temperature controlled refresh (TCR) Revision :B, :E, :R Fine granularity refresh 1. Not all options listed can be combined to Notes: Self refresh abort define an offered product. Use the part Maximum power saving catalog search on 8Gb: x8, x16 Automotive DDR4 SDRAM Features Table 1: Key Timing Parameters 1 t t t Speed Grade Data Rate (MT/s) Target CL-nRCD-nRP AA (ns) RCD (ns) RP (ns) -062E 3200 22-22-22 13.75 13.75 13.75 -075E 2666 18-18-18 13.5 13.5 13.5 -083E 2400 16-16-16 13.32 13.32 13.32 Note: 1. Refer to the Speed Bin Tables for backward compatibility. Table 2: Addressing Parameter 1024 Meg x 8 512 Meg x 16 Number of bank groups 4 2 Bank group address BG 1:0 BG0 Bank count per group 4 4 Bank address in bank group BA 1:0 BA 1:0 Row addressing 64K (A 15:0 ) 64K (A 15:0 ) Column addressing 1K (A 9:0 ) 1K (A 9:0 ) 1 Page size 1KB 2KB Note: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. Figure 1: Order Part Number Example ( DPSOH 3DUW 1XPEHU % 7 07 * :( ( 0DUN *LJ * % ( 5 EDOO PP PP )%* :( PP )%* EDOO PP 6 * EDOO PP PP )%* -< ,7 EDOO PP PP )%* < / XWRPRWLYH EDOO PP PP )%* 7 0DUN W &. QV &/ 3URGXFW FHUWLILFDWLRQ 0DUN W &. QV &/ XWRPRWLYH W &. QV &/ CCMTD-1406124318-10419 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 8gb auto ddr4 dram.pdf - Rev. J 02/2021 EN 2016 Micron Technology, Inc. All rights reserved. ( ( ( 6SHHG *UDGH 87 8OWUD KLJK 7 ,QGXVWULDO 1RQH &RPPHUFLDO 0DUN &DVH 7 HPSHUDWXUH 0DUN 3DFNDJH 0 0HJ 5HYLVLRQ &RQILJXUDWLRQ 07 5HYLVLRQ 6SHHG 3DFNDJH &RQILJXUDWLRQ

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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