Product Information

MT29F64G08CBCABH1-10Z:A

MT29F64G08CBCABH1-10Z:A electronic component of Micron

Datasheet
MLC NAND Flash Parallel/Serial 3.3V 64G-bit 8G x 8 20ns 100-Pin VBGA

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 12.3487 ea
Line Total: USD 37.05

0 - Global Stock
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3
Multiples : 1
3 : USD 12.3487

     
Manufacturer
Product Category
Interface Type
Access Time Max
Pin Count
Supply Current
Mounting
Operating Supply Voltage Typ
Operating Temp Range
Operating Supply Voltage Max
Operating Supply Voltage Min
Operating Temperature Max
Operating Temperature Min
Boot Type
Density
Programmable
Word Size
Package Type
Operating Temperature Classification
Rad Hardened
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Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F64G08CBAA A/B , MT29F128G08C E/F AAA, MT29F128G08CFAAB, MT29F256G08C J/K/M AAA, MT29F256G08CJAAB, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C K/M CAB, MT29F512G08CUCAB First block (block address 00h) is valid when ship- Features ped from factory. For minimum required ECC, see 1 Open NAND Flash Interface (ONFI) 2.2-compliant Error Management (page 112). Multiple-level cell (MLC) technology RESET (FFh) required as first command after pow- Organization er-on Page size x8: 8640 bytes (8192 + 448 bytes) Operation status byte provides software method for Block size: 256 pages (2048K + 112K bytes) detecting Plane size: 2 planes x 2048 blocks per plane Operation completion Device size: 64Gb: 4096 blocks Pass/fail condition 128Gb: 8192 blocks Write-protect status 256Gb: 16,384 blocks Data strobe (DQS) signals provide a hardware meth- 512Gb: 32,786 blocks od for synchronizing data DQ in the synchronous Synchronous I/O performance interface 2 Up to synchronous timing mode 5 Copyback operations supported within the plane Clock rate: 10ns (DDR) from which data is read Read/write throughput per pin: 200 MT/s Quality and reliability Asynchronous I/O performance Data retention: JESD47G compliant see qualifi- Up to asynchronous timing mode 5 cation report t t RC/ WC: 20ns (MIN) Endurance: 3000 PROGRAM/ERASE cycles Up to asynchronous timing mode 5 Operating temperature: Read/write throughput per pin: 50 MT/s Commercial: 0C to +70C Array performance Industrial (IT): 40C to +85C Read page: 75s (MAX) Package Program page: 1300s (TYP) 52-pad LGA Erase block: 3.8ms (TYP) 48-pin TSOP Operating Voltage Range 100-ball BGA V : 2.73.6V CC V : 1.71.95V, 2.73.6V 1. The ONFI 2.2 specification is available at CCQ Notes: Command set: ONFI NAND Flash Protocol www.onfi.org. Advanced Command Set 2. BGA devices up to Synchronous timing Program cache mode 5. TSOP devices up to Synchronous timing mode 4. Read cache sequential Read cache random One-time programmable (OTP) mode Multi-plane commands Multi-LUN operations Read unique ID Copyback PDF: 09005aef83d2277a Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 L74A 64Gb 128Gb 256Gb AsyncSync NAND.pdf Rev. J 8/16 EN Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 64G 08 C B A A A WP Z ES :A Micron Technology Design Revision A = First revision NAND Flash 29F = NAND Flash memory Production Status Blank = Production ES = Engineering sample Density 64G = 64Gb Reserved for Future Use 128G = 128Gb Blank 256G = 256Gb 512G = 512Gb Wafer Process Applied Blank = Polyimide Process Not Applied Device Width Z = Polyimide Process Applied 08 = 8 bits Operating Temperature Range Level Blank = Commercial (0C to +70C) Bit/Cell IT = Industrial (40C to +85C) C 2-bit Speed Grade (synchronous mode only) -12 = 166 MT/s Classification -10 = 200 MT/s Die of CE of R/B I/O 1 1 1 Common B Package Code 1 E 2 2 2 Separate C5 = 52-pad VLGA 14mm x 18mm x 1.0mm 1 H1 = 100-ball VBGA 12mm x 18mm x 1.0mm F 2 2 2 Common 1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm J 4 2 2 Common 1 H3 = 100-ball LBGA 12mm x 18mm x 1.4mm 1 K 4 2 2 Separate WP = 48-pin TSOP (CPL) M 4 4 4 Separate U 8 4 4 Separate Interface A = Async only B = Sync/Async Operating Voltage Range A = V : 3.3V (2.73.6V), V : 3.3V (2.73.6V) Generation Feature Set CC CCQ C = V : 3.3V (2.73.6V), V : 1.8V (1.71.95V) CC CCQ A = First set of device features Note: 1. Pb-free package. PDF: 09005aef83d2277a Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 L74A 64Gb 128Gb 256Gb AsyncSync NAND.pdf Rev. J 8/16 EN Micron Technology, Inc. All rights reserved.

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