Product Information

MT25QU01GBBB8E12-0AAT

MT25QU01GBBB8E12-0AAT electronic component of Micron

Datasheet
NOR Flash Serial-SPI 1.8V 1Gbit 1024M/512M/256M 1bit/2bit/4bit 6ns 24-Pin TBGA

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 21.8155 ea
Line Total: USD 21.82

7712 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1076 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 22.1875
10 : USD 19.7125
25 : USD 18.9625
50 : USD 17.875
100 : USD 17.5175
250 : USD 17.5175
500 : USD 17.5175

469 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1122
Multiples : 484
1122 : USD 21.3028
1200 : USD 21.0028
2300 : USD 20.4027
5700 : USD 19.9527
12000 : USD 19.2026
57000 : USD 18.9025
120000 : USD 18.6025

7712 - WHS 3


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 21.8155
10 : USD 20.654
25 : USD 20.4355
50 : USD 20.148
100 : USD 17.9745
250 : USD 17.365
500 : USD 17.2615
1122 : USD 17.2615

     
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RoHS - XON
Icon ROHS
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1Gb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 64KB Sector Erase MT25QU01GBBB Options Marking Features Voltage Stacked device (two 512Mb die) 1.72.0V U SPI-compatible serial bus interface Density Single and double transfer rate (STR/DTR) 1Gb 01G Clock frequency Device stacking 166 MHz (MAX) for all protocols in STR 2 die stacked B 90 MHz (MAX) for all protocols in DTR Device generation B Dual/quad I/O commands for increased through- Die revision B put up to 90 MB/s Pin configuration Supported protocols in both STR and DTR HOLD 1 Extended I/O protocol RESET and HOLD 8 Dual I/O protocol Sector Size Quad I/O protocol 64KB E Execute-in-place (XIP) Packages JEDEC-standard, RoHS- PROGRAM/ERASE SUSPEND operations compliant Volatile and nonvolatile configuration settings 24-ball T-PBGA 05/6mm x 8mm 12 Software reset (TBGA24) Additional reset pin for selected part numbers 16-pin SOP2, 300 mils SF 3-byte and 4-byte address modes enable memory (SO16W, SO16-Wide, SOIC-16) access beyond 128Mb W-PDFN-8 8mm x 6mm (MLP8 8mm W9 Dedicated 64-byte OTP area outside main memory x 6mm) Readable and user-lockable Security features Permanent lock with PROGRAM OTP command Standard security 0 Erase capability Special options Die erase Standard S Sector erase 64KB uniform granularity Automotive A Subsector erase 4KB, 32KB granularity Operating temperature range Security and write protection From 40C to +85C IT Volatile and nonvolatile locking and software From 40C to +105C AT write protection for each 64KB sector From 40C to +125C UT Nonvolatile configuration locking Password protection Hardware write protection: nonvolatile bits (BP 3:0 and TB) define protected area size Program/erase protection during power-up CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature (BB21h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) PDF: 09005aef8660ee28 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt25q-qlkt-U01-BBB-xxT.pdf - Rev. C 12/17 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1Gb, 1.8V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C UT = 40C to +125C Density 064 = 64Mb (8MB) Special Options 128 = 128Mb (16MB) S = Standard 256 = 256Mb (32MB) A = Automotive grade AEC-Q100 512 = 512Mb (64MB) 01G = 1Gb (128MB) Security Features 02G = 2Gb (256MB) 0 = Standard default security Stack Package Codes A = 1 die/1 S 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) B = 2 die/1 S 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) C = 4 die/1 S SC = 8-pin SOP2, 150 mil SE = 8-pin SOP2, 208 mil Device Generation SF = 16-pin SOP2, 300 mil B = 2nd generation W7 = 8-pin W-PDFN, 6 x 5mm W9 = 8-pin W-PDFN, 8 x 6mm 1 Die Revision 5x = WLCSP package A = Rev. A B = Rev. B Sector size E = 64KB sectors, 4KB and 32KB sub-sectors Pin Configuration Option 1 = HOLD pin 3 = RESET pin 8 = RESET and HOLD pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. PDF: 09005aef8660ee28 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt25q-qlkt-U01-BBB-xxT.pdf - Rev. C 12/17 EN 2015 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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