Product Information

MT18KSF51272AZ-1G6K1

MT18KSF51272AZ-1G6K1 electronic component of Micron

Datasheet
DRAM Module DDR3L SDRAM 4Gbyte 240UDIMM

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Warehouse 1

MOQ : 100
Multiples : 100
100 : USD 202.9788
200 : USD 200.9943
500 : USD 200.9815
N/A

Obsolete
0 - Warehouse 2

MOQ : 1
Multiples : 1
1 : USD 173.9
10 : USD 156.5237
25 : USD 140.8689
N/A

Obsolete
     
Manufacturer
Product Category
Mounting
Operating Temperature Min
Operating Temp Range
Pin Count
Device Core Size
Operating Temperature Classification
Maximum Clock Rate
Module Type
Total Density
Package Type
Number Of Elements
Main Category
Rad Hardened
Organization
Operating Supply Voltage Typ
Operating Supply Voltage Min
Operating Supply Voltage Max
Operating Temperature Max
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2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT18KSF25672AZ 2GB MT18KSF51272AZ 4GB MT18KSF1G72AZ 8GB Figure 1: 240-Pin UDIMM (MO-269 R/C E) Features Module height: 30.0mm (1.181 in.) DDR3L functionality and operations supported as defined in the component data sheet 240-pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 Options Marking 2GB (256 Meg x 72), 4GB (512 Meg x 72), Operating temperature 8GB (1 Gig x72) Commercial (0C T +70C) None A V = 1.35V (1.2351.45V) DD Package V = 1.5V (1.4251.575V) DD 240-pin DIMM (halogen-free) Z Backward compatible to V = 1.5V 0.075V DD Frequency/CAS latency V = 3.03.6V 1.25ns CL = 11 (DDR3-1600) -1G6 DDSPD 1.5ns CL = 9 (DDR3-1333) -1G4 Supports ECC error detection and correction 1.87ns CL = 7 (DDR3-1066) -1G1 Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Dual rank 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 8 internal device banks Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef83cd9e75 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ksf18c256 512 1gx72az.pdf - Rev. F 03/12 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3L UDIMM Features Table 2: Addressing Parameter 2GB 4GB 8GB Refresh count 8K 8K 8K Row address 16K A 13:0 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 8 BA 2:0 Device configuration 1Gb (128 Meg x8) 2Gb (256 Meg x 8) 4Gb (512 Meg x8 Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT41K128M8, 1.35V 1Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KSF25672AZ-1G6 2GB 256 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KSF25672AZ-1G4 2GB 256 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT18KSF25672AZ-1G1 2GB 256 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 4: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41K256M8, 1.35V 2Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KSF51272AZ-1G6 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KSF51272AZ-1G4 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT18KSF51272AZ-1G1 4GB 512 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 5: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41K512M8, 1.35V 4Gb DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KSF1G72AZ-1G6 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT18KSF1G72AZ-1G4 8GB 1 Gig x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT18KSF1G72AZ-1G1 8GB 1 Gig x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18KSF51272AZ-1G4K1. PDF: 09005aef83cd9e75 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ksf18c256 512 1gx72az.pdf - Rev. F 03/12 EN 2009 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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