2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
Features
DDR3 SDRAM UDIMM
MT18JSF25672AZ 2GB
MT18JSF51272AZ 4GB
MT18JSF1G72AZ 8GB
Figure 1: 240-Pin UDIMM (MO-269, PCB 1126 R/C
Features
E3)
DDR3 functionality and operations supported as
Module height: 30.0mm (1.181in)
defined in the component data sheet
240-pin, unbuffered dual in-line memory module
(UDIMM)
Fast data transfer rates: PC3-14900, PC3-12800, and
PC3-10600
2GB (256 Meg x 72), 4GB (512 Meg x 72),
Figure 2: 240-Pin UDIMM (MO-269, PCB 1561 R/C
8GB (1Gig x 72)
E3)
V = 1.5V 0.075V
DD
Module Height: 30.0mm (1.181in)
V = 3.03.6V
DDSPD
Supports ECC error detection and correction
Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
Dual rank
2
On-board I C temperature sensor with integrated
Options Marking
serial presence-detect (SPD) EEPROM
Operating temperature
8 internal device banks
Commercial (0C T +70C) None
A
Fixed burst chop (BC) of 4 and burst length (BL) of 8
Package
via the mode register set (MRS)
240-pin DIMM (halogen-free) Z
Selectable BC4 or BL8 on-the-fly (OTF)
Frequency/CAS latency
Gold edge contacts
1.07ns @ CL = 13 (DDR3-1866) -1G9
1.25ns @ CL = 11 (DDR3-1600) -1G6
Halogen-free
1.5ns @ CL = 9 (DDR3-1333) -1G4
Fly-by topology
Terminated control, command, and address bus
Table 1: Key Timing Parameters
Data Rate (MT/s)
t t t
Speed Industry CL = CL = CL = RCD RP RC
Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns)
-1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125
-1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125
-1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125
-1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625
-1G0 PC3-8500 1066 800 667 15 15 52.5
-80B PC3-6400 800 667 15 15 52.5
PDF: 09005aef83606b46 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
jsf18c256_512_1gx72az.pdf - Rev. K 11/15 EN 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
Features
Table 2: Addressing
Parameter 2GB 4GB 8GB
Refresh count 8K 8K 8K
Row address 16K A[13:0] 32K A[14:0] 64K A[15:0]
Device bank address 8 BA[2:0] 8 BA[2:0] 8 BA[2:0]
Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) 4Gb (512 Meg x 8)
Column address 1K A[9:0] 1K A[9:0] 1K A[9:0]
Module rank address 2 S#[1:0] 2 S#[1:0] 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters 2GB Modules
1
Base device: MT41J128M8, 1Gb DDR3 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT18JSF25672AZ-1G4__ 2GB 256 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9
Table 4: Part Numbers and Timing Parameters 4GB Modules
1
Base device: MT41J256M8 2Gb DDR3 SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT18JSF51272AZ-1G9__ 4GB 512 Meg x 72 14.9 GB/s 1.07ns/1866 MT/s 13-13-13
MT18JSF51272AZ-1G6__ 4GB 512 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11
MT18JSF51272AZ-1G4__ 4GB 512 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9
Table 5: Part Numbers and Timing Parameters 8GB Modules
1
Base device: MT41J512M8, or MT41K512M8 4Gb DDR3, or DDR3L SDRAM
Module Module Memory Clock/ Clock Cycles
2 t t
Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP)
MT18JSF1G72AZ-1G9__ 8GB 1 Gig x 72 14.9 GB/s 1.07ns/1866 MT/s 13-13-13
MT18JSF1G72AZ-1G6__ 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11
Notes: 1. The data sheet for the base device can be found on Microns web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT18JSF1G72AZ-1G9P1.
PDF: 09005aef83606b46 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
jsf18c256_512_1gx72az.pdf - Rev. K 11/15 EN 2009 Micron Technology, Inc. All rights reserved.