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MT16KTF2G64HZ-1G6A1

MT16KTF2G64HZ-1G6A1 electronic component of Micron

Datasheet
DRAM Module DDR3L SDRAM 16Gbyte 204SODIMM

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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16GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT16KTF2G64HZ 16GB Figure 1: 204-Pin SODIMM (MO-268 R/C-F3) Features Module Height: 30mm (1.181in) DDR3L functionality and operations supported as defined in the component data sheet 204-pin, small outline dual in-line memory module (SODIMM) Fast data transfer rates: PC3-14900 and PC3-12800 16GB (2 Gig x 64) V = 1.35V (1.283V1.45V) DD V = 1.5V (1.4251.575V) DD Backward compatible to V = 1.5V 0.075V DD V = 3.03.6V DDSPD Options Marking Nominal and dynamic on-die termination (ODT) for Operating temperature data, strobe, and mask signals Commercial (0C T 70C) None A Dual rank Package 204-pin DIMM (halogen-free) Z Fixed burst chop (BC) of 4 and burst length (BL) of 8 Frequency/CAS latency via the mode register set (MRS) 1.07ns CL = 13 (DDR3-1866) -1G9 2 On-board I C serial presence-detect (SPD) EEPROM 1.25ns CL = 11 (DDR3-1600) -1G6 Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry CL = CL = CL = RCD RP RC Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef85e5a92c Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ktf16c2gx64hz.pdf - Rev. B 2/15 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.16GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM Features Table 2: Addressing Parameter 16GB Refresh count 8K Row address 64K A 15:0 Device bank address 8 BA 2:0 Device configuration 8Gb (1 Gig x8) Column address 2K A 11, 9:0 Module rank address 2 S 1:0 Table 3: Part Numbers and Timing Parameters 16GB Modules 1 Base device: MT41K1G8, 8Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16KTF2G64HZ-1G9 16GB 2 Gig x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT16KTF2G64HZ-1G6 16GB 2 Gig x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 Notes: 1. The data sheet for the base device can be found on Microns web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT16KTF2G64HZ-1G9A1. PDF: 09005aef85e5a92c Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ktf16c2gx64hz.pdf - Rev. B 2/15 EN 2014 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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