Product Information

M29W160EB70N6F

M29W160EB70N6F electronic component of Micron

Datasheet
NOR Flash Parallel 3V/3.3V 16M-bit 2M x 8/1M x 16 70ns 48-Pin TSOP T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6: USD 2.5167 ea
Line Total: USD 15.1

0 - Global Stock
MOQ: 6  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 6
Multiples : 1
6 : USD 2.5167
10 : USD 2.2505
25 : USD 2.0687
50 : USD 1.9694
100 : USD 1.9497

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Program/Erase Volt Typ
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
Deleted
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M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V for Program, Erase CC and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME 10s per Byte/Word typical 35 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) 2 Parameter and 32 Main Blocks PROGRAM/ERASE CONTROLLER Embedded Byte/Word Program algorithms TSOP48 (N) ERASE SUSPEND and RESUME MODES 12 x 20mm Read and Program another Block during Erase Suspend UNLOCK BYPASS PROGRAM COMMAND Faster Production/Batch Programming FBGA TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE TFBGA48 (ZA) 64 bit Security Code 6 x 8mm LOW POWER CONSUMPTION Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE Manufacturer Code: 0020h Top Device Code M29W160ET: 22C4h Bottom Device Code M29W160EB: 2249h January 2004 1/40M29W160ET, M29W160EB TABLE OF CONTENTS FEATURES SUMMARY . 1 Figure 1. Packages 1 SUMMARY DESCRIPTION . 5 Figure 2. Logic Diagram 5 Table 1. Signal Names 5 Figure 3. TSOP Connections 6 Figure 4. TFBGA Connections (Top view through package) 7 Figure 5. Block Addresses (x8) . 8 Figure 6. Block Addresses (x16) 9 SIGNAL DESCRIPTIONS . 10 Address Inputs (A0-A19) . 10 Data Inputs/Outputs (DQ0-DQ7) . 10 Data Inputs/Outputs (DQ8-DQ14) 10 Data Input/Output or Address Input (DQ15A-1) 10 Chip Enable (E) 10 Output Enable (G) 10 Write Enable (W) . 10 Reset/Block Temporary Unprotect (RP) 10 Ready/Busy Output (RB) . 10 Byte/Word Organization Select (BYTE) 10 V Supply Voltage . 10 CC V Ground . 10 SS BUS OPERATIONS 11 Bus Read . 11 Bus Write . 11 Output Disable . 11 Standby 11 Automatic Standby 11 Special Bus Operations 11 Electronic Signature . 11 Block Protection and Blocks Unprotection 11 Table 2. Bus Operations, BYTE = V 11 IL Table 3. Bus Operations, BYTE = V 12 IH COMMAND INTERFACE . 12 Read/Reset Command . 12 Auto Select Command . 12 Program Command . 12 Unlock Bypass Command 13 Unlock Bypass Program Command . 13 Unlock Bypass Reset Command .13 2/40

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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